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Modelli EDAEasyEDA
Infineon IKW50N60H3
| Produttore | |
| Cod. Prod. | IKW50N60H3 |
| Cod. LCSC | C127956 |
| Imballo | TO-247-3 |
| Numero Cliente | |
| Attr. chiave | High speed IGBT in Trench and Fieldstop technology, 600V high speed switching series third generation |
| Scheda Tecnica | Infineon IKW50N60H3 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Pd - Power Dissipation | 333W | |
| Td(off) | 235ns | |
| Td(on) | 23ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 96pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.8mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.3V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 130ns | |
| Switching Energy(Eoff) | 910uJ | |
| Turn-On Energy (Eon) | 1.45mJ | |
| Input Capacitance(Cies) | 2.96nF | |
| Gate Charge(Qg) | 315nC@15V | |
| Output Capacitance(Coes) | 116pF |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Pd - Power Dissipation | 333W | |
| Td(off) | 235ns | |
| Td(on) | 23ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 96pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.8mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.3V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 130ns | |
| Switching Energy(Eoff) | 910uJ | |
| Turn-On Energy (Eon) | 1.45mJ | |
| Input Capacitance(Cies) | 2.96nF | |
| Gate Charge(Qg) | 315nC@15V | |
| Output Capacitance(Coes) | 116pF |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
Caratteristiche
Traduzione AI
- TRENCHSTOPTM technology offering
- very low VCEsat
- low EMI
- Very soft, fast recovery anti-parallel diode
- maximum junction temperature 175℃
- qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant
- complete product spectrum and PSpice Models
Applicazioni
Traduzione AI
- uninterruptible power supplies
- welding converters
- converters with high switching frequency
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 256
256 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 3.421 | $ 3.42 |
| 10+ | $ 2.925 | $ 29.25 |
| 30+ | $ 2.3502 | $ 70.51 |
| 90+ | $ 2.0332 | $ 182.99 |
| 480+ | $ 1.8887 | $ 906.58 |
| 960+ | $ 1.8279 | $ 1754.78 |
Package Standard30/Full Tube | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Pd - Power Dissipation | 333W | |
| Td(off) | 235ns | |
| Td(on) | 23ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 96pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.8mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.3V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 130ns | |
| Switching Energy(Eoff) | 910uJ | |
| Turn-On Energy (Eon) | 1.45mJ | |
| Input Capacitance(Cies) | 2.96nF | |
| Gate Charge(Qg) | 315nC@15V | |
| Output Capacitance(Coes) | 116pF |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Pd - Power Dissipation | 333W | |
| Td(off) | 235ns | |
| Td(on) | 23ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 96pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.8mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.3V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 130ns | |
| Switching Energy(Eoff) | 910uJ | |
| Turn-On Energy (Eon) | 1.45mJ | |
| Input Capacitance(Cies) | 2.96nF | |
| Gate Charge(Qg) | 315nC@15V | |
| Output Capacitance(Coes) | 116pF |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
Caratteristiche
Traduzione AI
- TRENCHSTOPTM technology offering
- very low VCEsat
- low EMI
- Very soft, fast recovery anti-parallel diode
- maximum junction temperature 175℃
- qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant
- complete product spectrum and PSpice Models
Applicazioni
Traduzione AI
- uninterruptible power supplies
- welding converters
- converters with high switching frequency
C127956 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| IGW50N60H3 | Infineon | Simili | TO-247-3 | 5 | $ 5.4182 | ||
| IKW60N60H3 | Infineon | Simili | TO-247-3 | 1 | $ 9.8509 | ||
| IKW50N60T | Infineon | Simili | TO-247 | 789 | $ 3.7857 | ||
| IKW50N60TFKSA1 | Infineon | Simili | TO-247-3 | 2 | $ 8.8742 | ||
| APT50GN60BDQ2G | MICROCHIP | Simili | TO-247 | 5 | $ 19.6564 |