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EDA 모델EasyEDA
onsemi MMUN2235LT1G
| 제조업체 | |
| 제조사 품번 | MMUN2235LT1G |
| LCSC 번호 | C891754 |
| 포장 | SOT-23 |
| 고객 번호 | |
| 주요 제원 | TRANS PREBIAS 50V SOT-23 |
| 데이터시트 | onsemi MMUN2235LT1G |
| RoHS 준수 | 4개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 0.056 | |
| Pd - Power Dissipation | 400mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| 타입 | 설명 | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 0.056 | |
| Pd - Power Dissipation | 400mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
주요 특징
AI 번역
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
품절
재입고 알림
최소값: 10배수: 10판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 10+ | $ 0.0509 | $ 0.51 |
| 100+ | $ 0.0398 | $ 3.98 |
| 300+ | $ 0.0342 | $ 10.26 |
| 3,000+ | $ 0.0301 | $ 90.30 |
| 6,000+ | $ 0.0267 | $ 160.20 |
| 9,000+ | $ 0.025 | $ 225.00 |
표준 패키지3000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 0.056 | |
| Pd - Power Dissipation | 400mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| 타입 | 설명 | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 0.056 | |
| Pd - Power Dissipation | 400mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
주요 특징
AI 번역
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C891754 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
대체 부품
| MPN | 제조사 | 대체 유형 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|---|
| BCR108E6327HTSA1 | Infineon | 직접 | SOT-23-3 | 5,425 | $ 0.4235 | ||
| DTC123JCAT116 | ROHM | 유사 제품 | TO-236-3(SOT-23-3) | 75 | $ 0.3472 | ||
| MMUN2238LT1G | onsemi | 유사 제품 | SOT-23 | 125 | $ 0.0884 | ||
| DTC123JCA | JSCJ | 유사 제품 | SOT-23 | 3,640 | $ 0.0243 | ||
| DTC123JCA | R+O | 유사 제품 | SOT-23 | 59,740 | $ 0.032 |
5 개의 추가 대체 부품이 있습니다.모든 대체품 보기