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VBsemi Elec ZXMP6A17E6TA-VB
| Fabricant | VBsemi ElecAsian Brands |
| Réf. Fab. | ZXMP6A17E6TA-VB |
| Réf. LCSC | C879042 |
| Condit. | TSOP-6 |
| Numéro Client | |
| Caract. clés | MOSFET P-CH 60V 3.5A TSOP-6 |
| Fiche Technique | VBsemi Elec ZXMP6A17E6TA-VB |
| Pièces alternatives | 5 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | VBsemi Elec | |
| Condit. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 3.5A | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 63pF | |
| RDS(on) | 75mΩ@10V;85mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | VBsemi Elec | |
| Condit. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 3.5A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 63pF | |
| RDS(on) | 75mΩ@10V;85mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Halogen-free options available, compliant with IEC 61249-2-21
- Trench power MOSFET
Applications
Traduction par IA
- Load Switch
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | VBsemi Elec | |
| Condit. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 3.5A | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 63pF | |
| RDS(on) | 75mΩ@10V;85mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | VBsemi Elec | |
| Condit. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 3.5A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 63pF | |
| RDS(on) | 75mΩ@10V;85mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Halogen-free options available, compliant with IEC 61249-2-21
- Trench power MOSFET
Applications
Traduction par IA
- Load Switch
C879042 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |