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Modèles EDAEasyEDA
MCC MCACL175N06Y-TP
| Fabricant | |
| Réf. Fab. | MCACL175N06Y-TP |
| Réf. LCSC | C6300518 |
| Condit. | DFN5060 |
| Numéro Client | |
| Caract. clés | 60V 175A 140W 2.25mΩ@10V 1 N-channel DFN5060 Single FETs, MOSFETs RoHS |
| Fiche Technique | MCC MCACL175N06Y-TP |
| Conformité RoHS | 1 documents disponibles |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MCC | |
| Condit. | DFN5060 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 175A | |
| Ciss-Input Capacitance | 5.25nF | |
| Pd - Power Dissipation | 140W | |
| RDS(on) | 2.25mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 50nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MCC | |
| Condit. | DFN5060 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 175A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 5.25nF | |
| Pd - Power Dissipation | 140W | |
| RDS(on) | 2.25mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 50nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Split-gate trench MOSFET technology
- Low thermal resistance
- Moisture sensitivity level 3
- Halogen-free, "green" device
- Epoxy meets UL 94 V-0 flammability rating
- Lead-free finish / RoHS compliant
Garantie sur chaque commande
100% Authentique · Retour ou échange sous 30 Jours
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MCC | |
| Condit. | DFN5060 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 175A | |
| Ciss-Input Capacitance | 5.25nF | |
| Pd - Power Dissipation | 140W | |
| RDS(on) | 2.25mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 50nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MCC | |
| Condit. | DFN5060 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 175A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 5.25nF | |
| Pd - Power Dissipation | 140W | |
| RDS(on) | 2.25mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 50nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Split-gate trench MOSFET technology
- Low thermal resistance
- Moisture sensitivity level 3
- Halogen-free, "green" device
- Epoxy meets UL 94 V-0 flammability rating
- Lead-free finish / RoHS compliant
C6300518 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |