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Infineon BC 857S H6433
| Hersteller | |
| Herst.-Teilenr. | BC 857S H6433 |
| LCSC-Nr. | C533771 |
| Verp. | SOT-363-6 |
| Kundennummer | |
| Hauptmerkm. | 250mW 45V 290 PNP 100mA SOT-363-6 Bipolar Transistor Arrays RoHS |
| Datenblatt | Infineon BC 857S H6433 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Hersteller | Infineon | |
| Verp. | SOT-363-6 | |
| Current - Collector Cutoff | 15nA | |
| Pd - Power Dissipation | 250mW | |
| Collector - Emitter Voltage VCEO | 45V | |
| DC Current Gain | 290 | |
| Emitter-Base Voltage VEBO | 5V | |
| Configuration | Standalone | |
| Transition frequency(fT) | 250MHz | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 75mV;250mV | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Hersteller | Infineon | |
| Verp. | SOT-363-6 | |
| Current - Collector Cutoff | 15nA | |
| Pd - Power Dissipation | 250mW | |
| Collector - Emitter Voltage VCEO | 45V | |
| DC Current Gain | 290 |
| Typ | Beschreibung | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Configuration | Standalone | |
| Transition frequency(fT) | 250MHz | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 75mV;250mV | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA |
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Merkmale
KI-Übersetzung
- For AF input stages and driver applications
- High current gain
- Low collector-emitter saturation voltage
- Two (galvanic) internal isolated transistor with good matching in one package
- Pb-free (RoHS compliant) package
- Qualified according AEC Q101
Anwendungen
KI-Übersetzung
- AF input stages
- driver applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.0936 | $ 0.09 |
| 200+ | $ 0.0363 | $ 7.26 |
| 500+ | $ 0.035 | $ 17.50 |
| 1,000+ | $ 0.0344 | $ 34.40 |
Standardgehäuse10000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Hersteller | Infineon | |
| Verp. | SOT-363-6 | |
| Current - Collector Cutoff | 15nA | |
| Pd - Power Dissipation | 250mW | |
| Collector - Emitter Voltage VCEO | 45V | |
| DC Current Gain | 290 | |
| Emitter-Base Voltage VEBO | 5V | |
| Configuration | Standalone | |
| Transition frequency(fT) | 250MHz | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 75mV;250mV | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Hersteller | Infineon | |
| Verp. | SOT-363-6 | |
| Current - Collector Cutoff | 15nA | |
| Pd - Power Dissipation | 250mW | |
| Collector - Emitter Voltage VCEO | 45V | |
| DC Current Gain | 290 |
| Typ | Beschreibung | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Configuration | Standalone | |
| Transition frequency(fT) | 250MHz | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 75mV;250mV | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- For AF input stages and driver applications
- High current gain
- Low collector-emitter saturation voltage
- Two (galvanic) internal isolated transistor with good matching in one package
- Pb-free (RoHS compliant) package
- Qualified according AEC Q101
Anwendungen
KI-Übersetzung
- AF input stages
- driver applications
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| BC857BDW1T1G | onsemi | Ähnliche | SOT-363 | 2,570 | $ 0.0455 | ||
| BCM857BS-7-F | DIODES | Ähnliche | SOT-363 | 7,750 | $ 0.1712 | ||
| AC857BSQ-7 | DIODES | Ähnliche | SOT-363 | 130 | $ 0.0703 | ||
| SBC857CDW1T1G | onsemi | Ähnliche | SOT-363 | 37 | $ 0.6548 | ||
| BC856BS-QX | Nexperia | Ähnliche | TSSOP-6 | 100 | $ 0.1952 |