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Infineon IRF7404TRPBF

Produttore
Cod. Prod.
IRF7404TRPBF
Cod. LCSC
C2997
Imballo
SO-8
Numero Cliente
Attr. chiave
MOSFET P-CH 20V 6.7A SO-8
Scheda TecnicaInfineon IRF7404TRPBF
Conformità RoHS1 documenti disponibili
Parti alternative5
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 1,030
1,030 Pronta consegna
Discontinuo
Esaurite le scorte, il prodotto risulterà "Non disponibile".
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
QtàPr. unit.Importo totale
1+$ 2.0275$ 2.03
10+$ 1.7024$ 17.02
30+$ 1.4989$ 44.97
100+$ 1.2904$ 129.04
500+$ 1.1968$ 598.40
1,000+$ 1.1558$ 1155.80
Package Standard4000/Full Reel

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreInfineon
ImballoSO-8
Output Capacitance(Coss)730pF
Pd - Power Dissipation2.5W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage20V
Current - Continuous Drain(Id)6.7A
Gate Threshold Voltage (Vgs(th))700mV
Reverse Transfer Capacitance (Crss@Vds)340pF
RDS(on)40mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.5nF
Gate Charge(Qg)50nC@4.5V
Vgs±12V
TypeP-Channel

Descrizione

Traduzione AI

Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO - 8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple - die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vaporphase, infrared, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Caratteristiche

Traduzione AI
  • Generation V Technology
  • Ultra Low On - Resistance
  • P - Channel Mosfet
  • Surface Mount
  • Available in Tape & Reel
  • Dynamic dv/dt Rating
  • Fast Switching
  • Lead - Free

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