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Modelos EDAEasyEDA
MDD(Microdiode Semiconductor) MB36S
| Fabricante | MDD(Microdiode Semiconductor)Asian Brands |
| N.º de pieza fab. | MB36S |
| Nº LCSC | C2993509 |
| Emb. | MBS |
| Número de Cliente | |
| Atrib. clave | 50A 700mV@2A 3A 60V MBS Bridge Rectifiers |
| Hoja de Datos | MDD(Microdiode Semiconductor) MB36S |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricante | MDD(Microdiode Semiconductor) | |
| Emb. | MBS | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Reverse Leakage Current (Ir) | 300uA@60V | |
| Voltage - Forward(Vf@If) | 700mV@2A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 60V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricante | MDD(Microdiode Semiconductor) | |
| Emb. | MBS | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+125℃ |
| Tipo | Descripción | |
|---|---|---|
| Reverse Leakage Current (Ir) | 300uA@60V | |
| Voltage - Forward(Vf@If) | 700mV@2A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 60V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Reverse voltage: 40 ~ 200 V
- Forward current: 3.0 A
- High surge current capability
- Designed for SMT applications
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricante | MDD(Microdiode Semiconductor) | |
| Emb. | MBS | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Reverse Leakage Current (Ir) | 300uA@60V | |
| Voltage - Forward(Vf@If) | 700mV@2A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 60V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricante | MDD(Microdiode Semiconductor) | |
| Emb. | MBS | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+125℃ |
| Tipo | Descripción | |
|---|---|---|
| Reverse Leakage Current (Ir) | 300uA@60V | |
| Voltage - Forward(Vf@If) | 700mV@2A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 60V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Reverse voltage: 40 ~ 200 V
- Forward current: 3.0 A
- High surge current capability
- Designed for SMT applications
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8504409190 |
| USHTS | 8504409540 |
| TARIC | 8504409590 |
| CAHTS | 8504409099 |
| BRHTS | 85044090 |
| INHTS | 85044090 |
| MXHTS | 8504.40.99 |
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8504409190 |
| USHTS | 8504409540 |
| TARIC | 8504409590 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8504409099 |
| BRHTS | 85044090 |
| INHTS | 85044090 |
| MXHTS | 8504.40.99 |