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Modelos EDAEasyEDA
YANGJIE HS1B
| Fabricante | YANGJIEAsian Brands |
| N.º de pieza fab. | HS1B |
| Nº LCSC | C211749 |
| Emb. | SMA(DO-214AC) |
| Número de Cliente | |
| Atrib. clave | Diode 100V 1A SMA(DO-214AC) |
| Hoja de Datos | YANGJIE HS1B |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | YANGJIE | |
| Emb. | SMA(DO-214AC) | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@1A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | 30A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | YANGJIE | |
| Emb. | SMA(DO-214AC) | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@1A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | 30A |
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | YANGJIE | |
| Emb. | SMA(DO-214AC) | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@1A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | 30A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | YANGJIE | |
| Emb. | SMA(DO-214AC) | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@1A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | 30A |
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C211749 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |