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Modelos EDAEasyEDA
VBsemi Elec SI3455ADV-T1-GE3-VB
| Fabricante | VBsemi ElecAsian Brands |
| N.º de pieza fab. | SI3455ADV-T1-GE3-VB |
| Nº LCSC | C19632037 |
| Emb. | TSOP-6 |
| Número de Cliente | |
| Atrib. clave | MOSFET P-CH 30V 4.8A TSOP-6 |
| Hoja de Datos | VBsemi Elec SI3455ADV-T1-GE3-VB |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 4.8A | |
| Ciss-Input Capacitance | 450pF | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 63pF | |
| RDS(on) | 49mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 4.8A | |
| Ciss-Input Capacitance | 450pF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 63pF | |
| RDS(on) | 49mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Halogen-free product compliant with IEC 61249-2-21
- Trench power MOSFET
Aplicaciones
Traducción por IA
- Load Switch
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 4.8A | |
| Ciss-Input Capacitance | 450pF | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 63pF | |
| RDS(on) | 49mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TSOP-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 4.8A | |
| Ciss-Input Capacitance | 450pF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 63pF | |
| RDS(on) | 49mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Halogen-free product compliant with IEC 61249-2-21
- Trench power MOSFET
Aplicaciones
Traducción por IA
- Load Switch
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |