ST M27V800-100F1
| Fabricante | |
| N.º de pieza fab. | M27V800-100F1 |
| Nº LCSC | C19512944 |
| Emb. | CDIP-42 |
| Número de Cliente | |
| Atrib. clave | 8Mbit 3V~3.6V EPROM CDIP-42 Memory RoHS |
| Hoja de Datos | ST M27V800-100F1 |
| Cumplimiento RoHS | 3 documentos disponibles |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | ST | |
| Emb. | CDIP-42 | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Electronic signature function | |
| Memory Size | 8Mbit | |
| Voltage - Supply | 3V~3.6V | |
| Memory Format | EPROM | |
| Interface | - |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | ST | |
| Emb. | CDIP-42 | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Electronic signature function |
| Tipo | Descripción | |
|---|---|---|
| Memory Size | 8Mbit | |
| Voltage - Supply | 3V~3.6V | |
| Memory Format | EPROM | |
| Interface | - |
Descripción
The M27V800 is a low voltage 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage. It is organised as either 1 Mbit words of 8 bit or 512 Kbit words of 16 bit. The pinout is compatible with a 8 Mbit Mask ROM. The M27V800 operates in the read mode with a supply voltage as low as 3V. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery recharges. The FDIP42W (window ceramic frit - seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written rapidly to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27V800 is offered in PDIP42, SO44 and PLCC44 package.
Características
- 3V to 3.6V LOW VOLTAGE in READ OPERATION
- ACCESS TIME: 100ns
- BYTE - WIDE or WORD - WIDE CONFIGURABLE
- 8 Mbit MASK ROM REPLACEMENT
- LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 20µA
- PROGRAMMING VOLTAGE: 12.5V±0.25V
- PROGRAMMING TIME: 100µs/word
- ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: B2h
Aplicaciones
- For microprocessor systems requiring large-capacity data or program storage
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | ST | |
| Emb. | CDIP-42 | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Electronic signature function | |
| Memory Size | 8Mbit | |
| Voltage - Supply | 3V~3.6V | |
| Memory Format | EPROM | |
| Interface | - |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | ST | |
| Emb. | CDIP-42 | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Electronic signature function |
| Tipo | Descripción | |
|---|---|---|
| Memory Size | 8Mbit | |
| Voltage - Supply | 3V~3.6V | |
| Memory Format | EPROM | |
| Interface | - |
Descripción
The M27V800 is a low voltage 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage. It is organised as either 1 Mbit words of 8 bit or 512 Kbit words of 16 bit. The pinout is compatible with a 8 Mbit Mask ROM. The M27V800 operates in the read mode with a supply voltage as low as 3V. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery recharges. The FDIP42W (window ceramic frit - seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written rapidly to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27V800 is offered in PDIP42, SO44 and PLCC44 package.
Características
- 3V to 3.6V LOW VOLTAGE in READ OPERATION
- ACCESS TIME: 100ns
- BYTE - WIDE or WORD - WIDE CONFIGURABLE
- 8 Mbit MASK ROM REPLACEMENT
- LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 20µA
- PROGRAMMING VOLTAGE: 12.5V±0.25V
- PROGRAMMING TIME: 100µs/word
- ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: B2h
Aplicaciones
- For microprocessor systems requiring large-capacity data or program storage
C19512944 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

