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onsemi NFAL5012L5BT

Fabricante
Cód. da peça
NFAL5012L5BT
Nº LCSC
C906580
Emb.
PowerDIP-31
Número do Cliente
Atrib. princ.
20kHz 1.2kV 50A 13.5V~16.5V IGBT PowerDIP-31 Power Driver Modules RoHS
Folha de Dadosonsemi NFAL5012L5BT
Conformidade RoHS3 documentos disponíveis
Garantia em cada pedido
100% Autêntico · Devolução ou Substituição em 30 Dias
Fora de estoque
Avise-me
Mínimo: 1Múltiplo: 1Unidade de venda: Piece
Adicionar à Lista BOM
Qtd.Preço unit.(Apenas para referência)Valor total
1+$ 75.284$ 75.28
200+$ 29.1344$ 5826.88
500+$ 28.1102$ 14055.10
1,000+$ 27.6045$ 27604.50
Encapsulamento Padrão24/Full Tube
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Especificações do Produto

Tudo
TipoDescrição
CategoriaDiscrete Semiconductors/Power Driver Modules
Fabricanteonsemi
Emb.PowerDIP-31
Width31mm
Length79mm
Quiescent Current(Iq)-
Pd - Power Dissipation-
High-side Bias Voltage(Vbs)13V~18.5V
Voltage - Isolation2500Vrms
Frequency - Switching20kHz
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)50A
Operating Temperature --40℃~+150℃
Voltage - Supply13.5V~16.5V
FeaturesUndervoltage lockout with hysteresis;Overcurrent Protection;Short-Circuit Protection
ConfigurationThree-phase bridge
TypeIGBT

Descrição

Tradução por IA

The NFAL5012L5BT is a smart power module providing a fully−featured, high−performance inverter output stage for AC induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built−in IGBTs to minimize EMI and losses, while also providing multiple on−module protection features: under−voltage lockouts, over−current shutdown, temperature sensing, and fault reporting. The built−in, high−speed HVIC requires only a single supply voltage and translates the incoming logic−level gate inputs to high−voltage, high−current drive signals to properly drive the module’s internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms.

Recursos

Tradução por IA
  • 1200 V – 50 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections
  • Low−Loss, Short−Circuit−Rated IGBTs
  • Very Low Thermal Resistance Using Al₂O₃ DBC Substrate
  • Built−In Bootstrap Diodes/Resistors
  • Separate Open−Emitter Pins from Low−Side IGBTs for Three−Phase Current Sensing
  • Built−In NTC Thermistor for Temperature Monitoring and Management
  • Adjustable Over−Current Protection via Integrated Sense−IGBTs
  • Isolation Rating of 2500 Vrms/1 min
  • These Devices are RoHS Compliant

Aplicações

Tradução por IA
  • Motion Control − Industrial Motor (AC 400 V Class)