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Modelos EDAEasyEDA
onsemi DTC143ZM3T5G
| Fabricante | |
| Cód. da peça | DTC143ZM3T5G |
| Nº LCSC | C896206 |
| Emb. | SOT-723-3 |
| Número do Cliente | |
| Atrib. princ. | 50V 80 100mA 260mW NPN 1 NPN (Pre-Biased) SOT-723-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Folha de Dados | onsemi DTC143ZM3T5G |
| Conformidade RoHS | 4 documentos disponíveis |
| Peças alternativas | 5 |
Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | SOT-723-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 0.12 | |
| Pd - Power Dissipation | 260mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | SOT-723-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrição | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 0.12 | |
| Pd - Power Dissipation | 260mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
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Descrição
Tradução por IA
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Recursos
Tradução por IA
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Garantia em cada pedido
100% Autêntico · Devolução ou Substituição em 30 Dias
Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | SOT-723-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 0.12 | |
| Pd - Power Dissipation | 260mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | SOT-723-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrição | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 0.12 | |
| Pd - Power Dissipation | 260mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Ajuda e FeedbackMostrar produtos similares (0) >
Descrição
Tradução por IA
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Recursos
Tradução por IA
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C896206 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |