Imágenes ilustrativas
Modelos EDAEasyEDA
onsemi NTMFS6B14NT3G
| Fabricante | |
| N.º de pieza fab. | NTMFS6B14NT3G |
| Nº LCSC | C893890 |
| Emb. | DFN-5(5.9x4.9) |
| Número de Cliente | |
| Atrib. clave | 100V 50A 77W 12.5mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs |
| Hoja de Datos | onsemi NTMFS6B14NT3G |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | DFN-5(5.9x4.9) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 1.3nF | |
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 12.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | DFN-5(5.9x4.9) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 1.3nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 12.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Compact package (5x6 mm) for space-constrained designs
- Low on-resistance RDS(on) minimizing conduction losses
- Low gate charge QG and capacitance minimizing switching losses
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | DFN-5(5.9x4.9) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 1.3nF | |
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 12.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | DFN-5(5.9x4.9) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 1.3nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 12.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Compact package (5x6 mm) for space-constrained designs
- Low on-resistance RDS(on) minimizing conduction losses
- Low gate charge QG and capacitance minimizing switching losses
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
C893890 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |