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Modelos EDAEasyEDA
onsemi FDC3601N
| Fabricante | |
| N.º de pieza fab. | FDC3601N |
| Nº LCSC | C719810 |
| Emb. | SuperSOT-6 |
| Número de Cliente | |
| Atrib. clave | 100V 1A 500mΩ@10V 960mW 2 N-Channel SuperSOT-6 FET, MOSFET Arrays RoHS |
| Hoja de Datos | onsemi FDC3601N |
| Cumplimiento RoHS | 4 documentos disponibles |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | onsemi | |
| Emb. | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Ciss-Input Capacitance | 153pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 5pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 1A | |
| RDS(on) | 500mΩ@10V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.7nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | onsemi | |
| Emb. | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Ciss-Input Capacitance | 153pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 5pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 1A |
| Tipo | Descripción | |
|---|---|---|
| RDS(on) | 500mΩ@10V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.7nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
These 100V N-channel MOSFETs are manufactured using onsemi's advanced PowerTrench process, which has been specially optimized to reduce on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to achieve superior power dissipation in an extremely small footprint, making them ideal for applications where larger and more expensive SO-8 and TSSOP-8 packages are impractical.
Características
Traducción por IA
- 1.0 A, 100 V. RDS(ON) = 500 mΩ at VGS = 10 V
- RDS(ON) = 550 mΩ at VGS = 6.0 V
- Low gate charge (typical 3.7 nC)
- Fast switching speed
- High-performance trench technology for ultra-low RDS(ON)
- SuperSOT-6 package: 72% smaller footprint than standard SO-8; low profile (1 mm thickness)
Aplicaciones
Traducción por IA
- Load switch
- Battery protection
- Power management
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | onsemi | |
| Emb. | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Ciss-Input Capacitance | 153pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 5pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 1A | |
| RDS(on) | 500mΩ@10V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.7nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | onsemi | |
| Emb. | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Ciss-Input Capacitance | 153pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 5pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 1A |
| Tipo | Descripción | |
|---|---|---|
| RDS(on) | 500mΩ@10V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.7nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
These 100V N-channel MOSFETs are manufactured using onsemi's advanced PowerTrench process, which has been specially optimized to reduce on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to achieve superior power dissipation in an extremely small footprint, making them ideal for applications where larger and more expensive SO-8 and TSSOP-8 packages are impractical.
Características
Traducción por IA
- 1.0 A, 100 V. RDS(ON) = 500 mΩ at VGS = 10 V
- RDS(ON) = 550 mΩ at VGS = 6.0 V
- Low gate charge (typical 3.7 nC)
- Fast switching speed
- High-performance trench technology for ultra-low RDS(ON)
- SuperSOT-6 package: 72% smaller footprint than standard SO-8; low profile (1 mm thickness)
Aplicaciones
Traducción por IA
- Load switch
- Battery protection
- Power management
C719810 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |