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Modelos EDAEasyEDA
VBsemi Elec AP9575GM-VB
| Fabricante | VBsemi ElecAsian Brands |
| N.º de pieza fab. | AP9575GM-VB |
| Nº LCSC | C558084 |
| Emb. | SOP-8 |
| Número de Cliente | |
| Atrib. clave | 60V 8A 1.67W 1 P-Channel SOP-8 Single FETs, MOSFETs |
| Hoja de Datos | VBsemi Elec AP9575GM-VB |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SOP-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 1.5nF | |
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss) | 142pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SOP-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 1.5nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss) | 142pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
- P-channel MOSFET
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SOP-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 1.5nF | |
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss) | 142pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SOP-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 1.5nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss) | 142pF | |
| RDS(on) | - | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
- P-channel MOSFET
C558084 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |