Infineon IFCM20U65GD
| Hersteller | |
| Herst.-Teilenr. | IFCM20U65GD |
| LCSC-Nr. | C535977 |
| Verp. | DIP-24 |
| Kundennummer | |
| Hauptmerkm. | 60kHz 650V 20A 13.5V~16.5V IGBT DIP-24 Power Driver Modules RoHS |
| Datenblatt | Infineon IFCM20U65GD |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 1 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Power Driver Modules | |
| Hersteller | Infineon | |
| Verp. | DIP-24 | |
| Width | - | |
| Length | - | |
| Quiescent Current(Iq) | 370uA | |
| Pd - Power Dissipation | 52.3W | |
| High-side Bias Voltage(Vbs) | - | |
| Voltage - Isolation | 2000Vrms | |
| Frequency - Switching | 60kHz | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -40℃~+125℃ | |
| Voltage - Supply | 13.5V~16.5V | |
| Features | Undervoltage lockout with hysteresis;Overcurrent Protection | |
| Configuration | Three-phase bridge | |
| Type | IGBT |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Power Driver Modules | |
| Hersteller | Infineon | |
| Verp. | DIP-24 | |
| Width | - | |
| Length | - | |
| Quiescent Current(Iq) | 370uA | |
| Pd - Power Dissipation | 52.3W | |
| High-side Bias Voltage(Vbs) | - | |
| Voltage - Isolation | 2000Vrms |
| Typ | Beschreibung | |
|---|---|---|
| Frequency - Switching | 60kHz | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -40℃~+125℃ | |
| Voltage - Supply | 13.5V~16.5V | |
| Features | Undervoltage lockout with hysteresis;Overcurrent Protection | |
| Configuration | Three-phase bridge | |
| Type | IGBT |
Beschreibung
The CIPOS module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. It is designed to enhance the system efficiency by improvement of power factor. The package concept is specially adapted to power applications, which need good thermal conduction and electrical isolation, but also EMI-save control and overload protection. TRENCHSTOP 5 are combined with an optimized SOI gate driver for excellent electrical performance.
Merkmale
- Dual In-Line molded module
- TRENCHSTOP 5 Rapid switching emitter controlled diode
- Rugged SOI gate driver technology with stability against transient
- Over current shutdown
- Under-voltage lockout
- All of 3 switches turn off during protection
- Temperature monitor
- Emitter pins accessible for all phase current monitoring (open emitter)
- Lead-free terminal plating; RoHS compliant
- Very low thermal resistance due to DCB
Anwendungen
- 3-Phase Interleaved PFC
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 22.0797 | $ 22.08 |
| 280+ | $ 8.5456 | $ 2392.77 |
| 560+ | $ 8.2453 | $ 4617.37 |
| 1,120+ | $ 8.0968 | $ 9068.42 |
Standardgehäuse280/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Power Driver Modules | |
| Hersteller | Infineon | |
| Verp. | DIP-24 | |
| Width | - | |
| Length | - | |
| Quiescent Current(Iq) | 370uA | |
| Pd - Power Dissipation | 52.3W | |
| High-side Bias Voltage(Vbs) | - | |
| Voltage - Isolation | 2000Vrms | |
| Frequency - Switching | 60kHz | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -40℃~+125℃ | |
| Voltage - Supply | 13.5V~16.5V | |
| Features | Undervoltage lockout with hysteresis;Overcurrent Protection | |
| Configuration | Three-phase bridge | |
| Type | IGBT |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Power Driver Modules | |
| Hersteller | Infineon | |
| Verp. | DIP-24 | |
| Width | - | |
| Length | - | |
| Quiescent Current(Iq) | 370uA | |
| Pd - Power Dissipation | 52.3W | |
| High-side Bias Voltage(Vbs) | - | |
| Voltage - Isolation | 2000Vrms |
| Typ | Beschreibung | |
|---|---|---|
| Frequency - Switching | 60kHz | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -40℃~+125℃ | |
| Voltage - Supply | 13.5V~16.5V | |
| Features | Undervoltage lockout with hysteresis;Overcurrent Protection | |
| Configuration | Three-phase bridge | |
| Type | IGBT |
Beschreibung
The CIPOS module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. It is designed to enhance the system efficiency by improvement of power factor. The package concept is specially adapted to power applications, which need good thermal conduction and electrical isolation, but also EMI-save control and overload protection. TRENCHSTOP 5 are combined with an optimized SOI gate driver for excellent electrical performance.
Merkmale
- Dual In-Line molded module
- TRENCHSTOP 5 Rapid switching emitter controlled diode
- Rugged SOI gate driver technology with stability against transient
- Over current shutdown
- Under-voltage lockout
- All of 3 switches turn off during protection
- Temperature monitor
- Emitter pins accessible for all phase current monitoring (open emitter)
- Lead-free terminal plating; RoHS compliant
- Very low thermal resistance due to DCB
Anwendungen
- 3-Phase Interleaved PFC
C535977 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Typ | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| IFCM15P60GD | Infineon | Ähnliche | DIP-24 | 3 | $ 17.4214 |

