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Modelos EDAEasyEDA
Nexperia PMV27UPER
| Fabricante | |
| N.º de pieza fab. | PMV27UPER |
| Nº LCSC | C5311569 |
| Emb. | SOT-23-3 |
| Número de Cliente | |
| Atrib. clave | MOSFET P-CH 20V 5.6A SOT-23-3 |
| Hoja de Datos | Nexperia PMV27UPER |
| Cumplimiento RoHS | 2 documentos disponibles |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Nexperia | |
| Emb. | SOT-23-3 | |
| Output Capacitance(Coss) | 208pF | |
| Ciss-Input Capacitance | 1.82nF | |
| Pd - Power Dissipation | 980mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5.6A | |
| Reverse Transfer Capacitance (Crss) | 146pF | |
| RDS(on) | 27mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 22.1nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Nexperia | |
| Emb. | SOT-23-3 | |
| Output Capacitance(Coss) | 208pF | |
| Ciss-Input Capacitance | 1.82nF | |
| Pd - Power Dissipation | 980mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.6A | |
| Reverse Transfer Capacitance (Crss) | 146pF | |
| RDS(on) | 27mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 22.1nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Características
Traducción por IA
- Trench MOSFET technology
- Low threshold voltage
- Very fast switching
- Enhanced power dissipation capability: P_tot = 980 mW
- ElectroStatic Discharge (ESD) protection 2 kV HBM
Aplicaciones
Traducción por IA
- LED driver
- Power management
- High-side loadswitch
- Switching circuits
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Nexperia | |
| Emb. | SOT-23-3 | |
| Output Capacitance(Coss) | 208pF | |
| Ciss-Input Capacitance | 1.82nF | |
| Pd - Power Dissipation | 980mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5.6A | |
| Reverse Transfer Capacitance (Crss) | 146pF | |
| RDS(on) | 27mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 22.1nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Nexperia | |
| Emb. | SOT-23-3 | |
| Output Capacitance(Coss) | 208pF | |
| Ciss-Input Capacitance | 1.82nF | |
| Pd - Power Dissipation | 980mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.6A | |
| Reverse Transfer Capacitance (Crss) | 146pF | |
| RDS(on) | 27mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 22.1nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Características
Traducción por IA
- Trench MOSFET technology
- Low threshold voltage
- Very fast switching
- Enhanced power dissipation capability: P_tot = 980 mW
- ElectroStatic Discharge (ESD) protection 2 kV HBM
Aplicaciones
Traducción por IA
- LED driver
- Power management
- High-side loadswitch
- Switching circuits
C5311569 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |