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Modelos EDAEasyEDA
VBsemi Elec HAT1126R-VB
| Fabricante | VBsemi ElecAsian Brands |
| N.º de pieza fab. | HAT1126R-VB |
| Nº LCSC | C5137428 |
| Emb. | SO-8 |
| Número de Cliente | |
| Atrib. clave | MOSFET P-CH ARR 60V 5.3A SO-8 |
| Hoja de Datos | VBsemi Elec HAT1126R-VB |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 210pF | |
| Current - Continuous Drain(Id) | 5.3A | |
| Ciss-Input Capacitance | 1.345nF | |
| Pd - Power Dissipation | 4W | |
| Reverse Transfer Capacitance (Crss) | 180pF | |
| RDS(on) | 54mΩ@10V;60mΩ@4.5V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 32nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 210pF | |
| Current - Continuous Drain(Id) | 5.3A | |
| Ciss-Input Capacitance | 1.345nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 4W | |
| Reverse Transfer Capacitance (Crss) | 180pF | |
| RDS(on) | 54mΩ@10V;60mΩ@4.5V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 32nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Halogen-free
- Trench power MOSFET
- 100% tested for single-pulse avalanche ruggedness
Aplicaciones
Traducción por IA
- Load Switch
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 210pF | |
| Current - Continuous Drain(Id) | 5.3A | |
| Ciss-Input Capacitance | 1.345nF | |
| Pd - Power Dissipation | 4W | |
| Reverse Transfer Capacitance (Crss) | 180pF | |
| RDS(on) | 54mΩ@10V;60mΩ@4.5V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 32nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 210pF | |
| Current - Continuous Drain(Id) | 5.3A | |
| Ciss-Input Capacitance | 1.345nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 4W | |
| Reverse Transfer Capacitance (Crss) | 180pF | |
| RDS(on) | 54mΩ@10V;60mΩ@4.5V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 32nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Halogen-free
- Trench power MOSFET
- 100% tested for single-pulse avalanche ruggedness
Aplicaciones
Traducción por IA
- Load Switch
C5137428 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |