BYD BG150B12UY3-I

Hersteller	BYDAsian Brands
Herst.-Teilenr.	BG150B12UY3-I
LCSC-Nr.	C489796
Verp.	-
Kundennummer
Hauptmerkm.	150A 1.2kV FS (Field Stop) Single IGBTs
Datenblatt	BYD BG150B12UY3-I

Produktspezifikationen

Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Hersteller	BYD
Verp.	-
Td(off)	34ns;375ns
Pd - Power Dissipation	-
Td(on)	283ns;300ns
Current - Collector(Ic)	150A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Operating Temperature	-40℃~+150℃
Vce Saturation(VCE(sat))	2.6V;3.4V
Reverse Recovery Time(trr)	299ns
Collector Cut-Off Current (Ices)	-
Switching Energy(Eoff)	6.5mJ;9mJ
Turn-On Energy (Eon)	7mJ;14.4mJ
Input Capacitance(Cies)	-
Output Capacitance(Coes)	-
Gate Charge(Qg)	-

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Hersteller	BYD
Verp.	-
Td(off)	34ns;375ns
Pd - Power Dissipation	-
Td(on)	283ns;300ns
Current - Collector(Ic)	150A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	FS (Field Stop)

Typ	Beschreibung
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Operating Temperature	-40℃~+150℃
Vce Saturation(VCE(sat))	2.6V;3.4V
Reverse Recovery Time(trr)	299ns
Collector Cut-Off Current (Ices)	-
Switching Energy(Eoff)	6.5mJ;9mJ
Turn-On Energy (Eon)	7mJ;14.4mJ
Input Capacitance(Cies)	-
Output Capacitance(Coes)	-
Gate Charge(Qg)	-

Garantie auf jede Bestellung

100% Authentisch · 30-Tage-Rückgabe oder -Umtausch

Nicht vorrätig

Benachrichtigen

Minimum: 1Vielfaches: 1Verkaufseinheit: Piece

Zur BOM-Liste hinzufügen

Besserer Preis bei größerer Menge?

$

Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Hersteller	BYD
Verp.	-
Td(off)	34ns;375ns
Pd - Power Dissipation	-
Td(on)	283ns;300ns
Current - Collector(Ic)	150A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Operating Temperature	-40℃~+150℃
Vce Saturation(VCE(sat))	2.6V;3.4V
Reverse Recovery Time(trr)	299ns
Collector Cut-Off Current (Ices)	-
Switching Energy(Eoff)	6.5mJ;9mJ
Turn-On Energy (Eon)	7mJ;14.4mJ
Input Capacitance(Cies)	-
Output Capacitance(Coes)	-
Gate Charge(Qg)	-

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Hersteller	BYD
Verp.	-
Td(off)	34ns;375ns
Pd - Power Dissipation	-
Td(on)	283ns;300ns
Current - Collector(Ic)	150A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	FS (Field Stop)

Typ	Beschreibung
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Operating Temperature	-40℃~+150℃
Vce Saturation(VCE(sat))	2.6V;3.4V
Reverse Recovery Time(trr)	299ns
Collector Cut-Off Current (Ices)	-
Switching Energy(Eoff)	6.5mJ;9mJ
Turn-On Energy (Eon)	7mJ;14.4mJ
Input Capacitance(Cies)	-
Output Capacitance(Coes)	-
Gate Charge(Qg)	-