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EDA-ModelleEasyEDA
UTC 4N100L-TF1-T
| Hersteller | UTCAsian Brands |
| Herst.-Teilenr. | 4N100L-TF1-T |
| LCSC-Nr. | C487750 |
| Verp. | TO-220F1 |
| Kundennummer | |
| Hauptmerkm. | 38W 1kV 4A 3.5Ω@10V 1 N-channel N-Channel TO-220F1 Single FETs, MOSFETs |
| Datenblatt | UTC 4N100L-TF1-T |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | UTC | |
| Verp. | TO-220F1 | |
| Output Capacitance(Coss) | 90pF | |
| Ciss-Input Capacitance | 1.5nF | |
| Pd - Power Dissipation | 38W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 3.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | UTC | |
| Verp. | TO-220F1 | |
| Output Capacitance(Coss) | 90pF | |
| Ciss-Input Capacitance | 1.5nF | |
| Pd - Power Dissipation | 38W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 3.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
UTC 4N100 is an N-channel MOSFET that utilizes UTC's advanced technology to deliver high switching speed and high breakdown voltage.
Merkmale
KI-Übersetzung
- R<sub>DS(ON)</sub> < 3.5Ω at V<sub>GS</sub> = 10V, I<sub>D</sub> = 2A
- High switching speed
- High breakdown voltage
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 1,000
1,000 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7112 | $ 0.71 |
| 10+ | $ 0.5766 | $ 5.77 |
| 50+ | $ 0.5092 | $ 25.46 |
| 100+ | $ 0.4419 | $ 44.19 |
| 500+ | $ 0.4025 | $ 201.25 |
| 1,000+ | $ 0.3811 | $ 381.10 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | UTC | |
| Verp. | TO-220F1 | |
| Output Capacitance(Coss) | 90pF | |
| Ciss-Input Capacitance | 1.5nF | |
| Pd - Power Dissipation | 38W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 3.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | UTC | |
| Verp. | TO-220F1 | |
| Output Capacitance(Coss) | 90pF | |
| Ciss-Input Capacitance | 1.5nF | |
| Pd - Power Dissipation | 38W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 3.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
UTC 4N100 is an N-channel MOSFET that utilizes UTC's advanced technology to deliver high switching speed and high breakdown voltage.
Merkmale
KI-Übersetzung
- R<sub>DS(ON)</sub> < 3.5Ω at V<sub>GS</sub> = 10V, I<sub>D</sub> = 2A
- High switching speed
- High breakdown voltage
C487750 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| MS8N100FS | MASPOWER | Ähnliche | TO-220F | 55 | $ 1.6409 | ||
| MS5N100S | MASPOWER | Ähnliche | TO-220F-3 | 51 | $ 0.7112 | ||
| STF12N120K5 | ST | Ähnliche | TO-220FP | 5 | $ 18.1143 | ||
| SP4N90TG | Siliup | Ähnliche | TO-220F | 21 | $0.5949 $0.6998 | ||
| STF5N95K3 | ST | Ähnliche | TO-220FP | 499 | $ 2.1076 |