DIODES DDTC143EUA-7-F
| Producent | |
| Nr części prod. | DDTC143EUA-7-F |
| Nr LCSC | C460045 |
| Opak. | SOT-323 |
| Numer Klienta | |
| Klucz. cechy | TRANS PREBIAS 50V SOT-323 |
| Karta Katalogowa | DIODES DDTC143EUA-7-F |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | DIODES | |
| Opak. | SOT-323 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 20 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | DIODES | |
| Opak. | SOT-323 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 20 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
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Funkcje
Tłumaczenie AI
- Epitaxial Planar Die Construction
- Complementary PNP Types Available (DDTA)
- Built-In Biasing Resistors, R1=R2
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. "Green" Device
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 5+ | $ 0.0948 | $ 0.47 |
| 50+ | $ 0.0761 | $ 3.81 |
| 150+ | $ 0.0667 | $ 10.01 |
| 500+ | $ 0.0597 | $ 29.85 |
| 3,000+ | $ 0.0541 | $ 162.30 |
| 6,000+ | $ 0.0513 | $ 307.80 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | DIODES | |
| Opak. | SOT-323 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 20 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | DIODES | |
| Opak. | SOT-323 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 20 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Epitaxial Planar Die Construction
- Complementary PNP Types Available (DDTA)
- Built-In Biasing Resistors, R1=R2
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. "Green" Device
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable
C460045 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| MUN5232T1G | onsemi | Bezpośredni | SC-70-3 | 130 | $ 0.0571 | ||
| DDTC114EUA-7-F | DIODES | Podobne | SOT-323 | 1,900 | $ 0.3115 | ||
| DDTC115EUA-7-F | DIODES | Podobne | SOT-323 | 110 | $ 0.0677 | ||
| RN1301,LF | TOSHIBA | Podobne | SOT-323 | 60 | $ 0.0634 | ||
| PDTC124XU,115 | Nexperia | Podobne | SOT-323 | 10 | $ 0.3485 |



