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TI IRF743

Hersteller
TI
Herst.-Teilenr.
IRF743
LCSC-Nr.
C3280378
Verp.
TO-220
Kundennummer
Hauptmerkm.
350V 4V 550mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs
DatenblattTI IRF743
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
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Stk.E-Preis(Nur als Referenz)Gesamtbetrag
1+$ 1.0277$ 1.03
200+$ 0.3981$ 79.62
500+$ 0.3843$ 192.15
1,000+$ 0.3765$ 376.50
Standardgehäuse1/Full Bag
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
HerstellerTI
Verp.TO-220
Configuration-
Drain to Source Voltage350V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)-
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.25nF
Gate Charge(Qg)63nC@10V
TypeN-Channel
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Beschreibung

KI-Übersetzung

IRF740, IRF741, IRF742, and IRF743 are n-channel enhancement-mode silicon-gate power MOSFETs. The IRF740R, IRF741R, IRF742R, and IRF743R types are advanced power MOSFETs designed, tested, and guaranteed to withstand specified levels of energy in the avalanche breakdown operating mode. All of these power MOSFETs are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These devices can be driven directly by ICs.

Merkmale

KI-Übersetzung
  • 8A and 10A, 350V - 400V
  • Drain-source on-resistance rDS(on) = 0.55Ω and 0.8Ω
  • Single pulse avalanche energy rated
  • SOA limited by power dissipation
  • Nanosecond switching speed
  • Linear transfer characteristics
  • High input impedance