MCC MCM1208-TP
| Fabricante | |
| N.º de pieza fab. | MCM1208-TP |
| Nº LCSC | C3277695 |
| Emb. | DFN2020-6J |
| Número de Cliente | |
| Atrib. clave | P-Channel, Current:8A, Voltage:12V |
| Hoja de Datos | MCC MCM1208-TP |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | MCC | |
| Emb. | DFN2020-6J | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 1.275nF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 12V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 150mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | MCC | |
| Emb. | DFN2020-6J | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 1.275nF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 12V | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 150mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
Power MOS 7° is a new generation of low-loss, high-voltage, N-channel enhancement mode power MOSFETs. Power MOS 7° addresses conduction loss and switching loss by significantly reducing RDS(ON) and gate charge Qg. Power MOS 7° combines lower conduction and switching losses with the inherently fast switching speed of APT's patented metal gate structure.
Características
Traducción por IA
- Advanced trench MOSFET process technology
- Ultra-low on-resistance and low gate charge
- Epoxy meets UL 94 V-0 flammability rating
- Moisture sensitivity level 1
- Halogen-free, "green" device
- Lead-free surface finish / RoHS compliant (suffix "P" denotes RoHS compliant)
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | MCC | |
| Emb. | DFN2020-6J | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 1.275nF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 12V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 150mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | MCC | |
| Emb. | DFN2020-6J | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 1.275nF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 12V | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 150mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
Power MOS 7° is a new generation of low-loss, high-voltage, N-channel enhancement mode power MOSFETs. Power MOS 7° addresses conduction loss and switching loss by significantly reducing RDS(ON) and gate charge Qg. Power MOS 7° combines lower conduction and switching losses with the inherently fast switching speed of APT's patented metal gate structure.
Características
Traducción por IA
- Advanced trench MOSFET process technology
- Ultra-low on-resistance and low gate charge
- Epoxy meets UL 94 V-0 flammability rating
- Moisture sensitivity level 1
- Halogen-free, "green" device
- Lead-free surface finish / RoHS compliant (suffix "P" denotes RoHS compliant)
C3277695 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

