Infineon F3L300R12MT4PB23

Fabricante	Infineon
N.º de pieza fab.	F3L300R12MT4PB23
Nº LCSC	C3198664
Emb.	-
Número de Cliente
Atrib. clave	20mW 300A 1.2kV FS (Field Stop) Single IGBTs RoHS
Hoja de Datos	Infineon F3L300R12MT4PB23
Cumplimiento RoHS	1 documentos disponibles

Especificaciones del Producto

Todo

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	Infineon
Emb.	-
Td(off)	-
Pd - Power Dissipation	20mW
Td(on)	-
Current - Collector(Ic)	300A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	1.05nF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,300A
Operating Temperature	-40℃~+150℃@(Tj)
Vce Saturation(VCE(sat))	-
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Input Capacitance(Cies)	19nF@25V
Output Capacitance(Coes)	-
Gate Charge(Qg)	-

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	Infineon
Emb.	-
Td(off)	-
Pd - Power Dissipation	20mW
Td(on)	-
Current - Collector(Ic)	300A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	1.05nF
IGBT Type	FS (Field Stop)

Tipo	Descripción
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,300A
Operating Temperature	-40℃~+150℃@(Tj)
Vce Saturation(VCE(sat))	-
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Input Capacitance(Cies)	19nF@25V
Output Capacitance(Coes)	-
Gate Charge(Qg)	-

Garantía en cada pedido

100% Auténtico · Devolución o Reemplazo en 30 Días

Todo

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	Infineon
Emb.	-
Td(off)	-
Pd - Power Dissipation	20mW
Td(on)	-
Current - Collector(Ic)	300A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	1.05nF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,300A
Operating Temperature	-40℃~+150℃@(Tj)
Vce Saturation(VCE(sat))	-
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Input Capacitance(Cies)	19nF@25V
Output Capacitance(Coes)	-
Gate Charge(Qg)	-

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	Infineon
Emb.	-
Td(off)	-
Pd - Power Dissipation	20mW
Td(on)	-
Current - Collector(Ic)	300A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	1.05nF
IGBT Type	FS (Field Stop)

Tipo	Descripción
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,300A
Operating Temperature	-40℃~+150℃@(Tj)
Vce Saturation(VCE(sat))	-
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Input Capacitance(Cies)	19nF@25V
Output Capacitance(Coes)	-
Gate Charge(Qg)	-