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TI TLV8544DR

Hersteller
Herst.-Teilenr.
TLV8544DR
LCSC-Nr.
C2860045
Verp.
SOIC-14
Kundennummer
Hauptmerkm.
500nA RRIO Nano-power Operational Amplifier
DatenblattTI TLV8544DR
RoHS-Konformität2 Dokumente verfügbar
Alternativteile5
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 987
987 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
Stk.E-PreisGesamtbetrag
1+$ 1.2373$ 1.24
10+$ 1.11$ 11.10
30+$ 0.9909$ 29.73
100+$ 0.9011$ 90.11
500+$ 0.8652$ 432.60
1,000+$ 0.8472$ 847.20
Standardgehäuse2500/Full Reel
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
HerstellerTI
Verp.SOIC-14
Output Current15mA
Number of Channels4
Vos - Input Offset Voltage3.1mV
Slew Rate4.5V/ms
Input Offset Current(Ios)0.1pA
Operating Temperature-40℃~+125℃
Common Mode Rejection Ratio(CMRR)90dB
Ib - Input Bias Current0.1pA
Input Offset Voltage Drift(Vos TC)800nV/℃
Quiescent Current500nA
Gain Bandwidth Product8kHz
FeaturesBuilt-in compensation;EMI filtering/RF suppression
Input Voltage Noise Density264nV/√Hz@1kHz
Dual Supply-
Rail to RailRail-to-Rail Input, Rail-to-Rail Output
Single Supply1.7V~3.6V

Beschreibung

KI-Übersetzung

The TLV854x ultra-low-power operational amplifiers are suitable for cost-optimized sensing applications in wireless and low-power wired devices. The TLV854x series of operational amplifiers can minimize the power consumption of devices such as motion detection security systems (e.g., microwave and PIR motion sensing systems) that place a high emphasis on battery life. The complementary metal-oxide-semiconductor (CMOS) input stage of such devices is carefully designed to achieve ultra-low femtoampere offset current, thereby reducing IBIAS and IOS errors that would otherwise affect sensitive applications. Examples of such applications include transimpedance amplifier (TIA) configurations with megaohm feedback resistors and high source impedance sensing applications. Additionally, the built-in EMI protection reduces the device's sensitivity to unwanted RF signals emitted by mobile phones, WiFi, radio transmitters, and tag readers.

Merkmale

KI-Übersetzung
  • Nanoamp supply current: 500nA/channel
  • Offset voltage: 3.1mV (maximum)
  • TcVos: 0.8μV/°C
  • Gain bandwidth: 8kHz
  • Unity-gain stable
  • Low input bias current: 100fA
  • Wide supply voltage range: 1.7V to 3.6V
  • Rail-to-rail input and output (RRIO)
  • Temperature range: -40°C to +125°C
  • Industry-standard packages: quad 14-pin TSSOP and SOIC, dual 8-pin SOIC, single 5-pin SOT-23, leadless package (dual 8-pin X2QFN)

Anwendungen

KI-Übersetzung
  • Motion detector using PIR sensor SNAA301
  • Motion detector using microwave sensor
  • Gas detector
  • Ionization smoke alarm
  • Temperature control device
  • Remote sensor, IoT
  • RFID reader and tag
  • Portable medical device
  • Blood glucose monitoring

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