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Infineon IRFZ44NPBF
| Hersteller | |
| Herst.-Teilenr. | IRFZ44NPBF |
| LCSC-Nr. | C2586 |
| Verp. | TO-220AB |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 55V 49A TO-220AB |
| Datenblatt | Infineon IRFZ44NPBF |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220AB | |
| Output Capacitance(Coss) | 360pF | |
| Pd - Power Dissipation | 94W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 49A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 17.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.47nF | |
| Gate Charge(Qg) | 63nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220AB | |
| Output Capacitance(Coss) | 360pF | |
| Pd - Power Dissipation | 94W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 49A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 17.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.47nF | |
| Gate Charge(Qg) | 63nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
Advanced HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Merkmale
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2894 | $ 1.45 |
| 50+ | $ 0.2069 | $ 10.35 |
| 150+ | $ 0.1764 | $ 26.46 |
| 500+ | $ 0.1493 | $ 74.65 |
| 2,500+ | $ 0.1418 | $ 354.50 |
| 5,000+ | $ 0.1373 | $ 686.50 |
Standardgehäuse50/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220AB | |
| Output Capacitance(Coss) | 360pF | |
| Pd - Power Dissipation | 94W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 49A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 17.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.47nF | |
| Gate Charge(Qg) | 63nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220AB | |
| Output Capacitance(Coss) | 360pF | |
| Pd - Power Dissipation | 94W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 49A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 17.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.47nF | |
| Gate Charge(Qg) | 63nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
Advanced HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Merkmale
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
C2586 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| STP55NF06 | ST | TO-220 | 8,303 | $ 0.5912 | ||
| APG078N07 | ALLPOWER | TO-220 | 15 | $ 0.6135 | ||
| IRFZ44N-MNS | Minos | TO-220 | 305 | $ 0.3093 | ||
| SPZ44TQ | Siliup | TO-220-3L | 290 | $0.2740 $0.3044 | ||
| IRFZ46NPBF | Infineon | TO-220AB | 4,126 | $ 0.4262 | ||
| STP60NF06 | ST | TO-220 | 582 | $ 1.2428 | ||
| AUIRFZ44NS | Infineon | TO-220AB | 0 | $ 1.1264 | ||
| VBM1615 | VBsemi Elec | ITO-220AB-3 | 0 | $1.0326 $1.0869 | ||
| IPP16CN10NGHKSA1 | Infineon | TO-220-3 | 0 | $ 1.8841 | ||
| 60N06L-TA3-T | UTC | TO-220 | 0 | $ 0.7279 |