Immagini a scopo illustrativo
Modelli EDAEasyEDA
AOS AONS62920
| Produttore | |
| Cod. Prod. | AONS62920 |
| Cod. LCSC | C20266274 |
| Imballo | DFN-8(5x6) |
| Numero Cliente | |
| Attr. chiave | 100V 48A 113.5W 5.1mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS |
| Scheda Tecnica | AOS AONS62920 |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | DFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 345pF | |
| Current - Continuous Drain(Id) | 48A | |
| Ciss-Input Capacitance | 4.525nF | |
| Pd - Power Dissipation | 113.5W | |
| Reverse Transfer Capacitance (Crss) | 22.5pF | |
| RDS(on) | 5.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.75V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | DFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 345pF | |
| Current - Continuous Drain(Id) | 48A | |
| Ciss-Input Capacitance | 4.525nF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 113.5W | |
| Reverse Transfer Capacitance (Crss) | 22.5pF | |
| RDS(on) | 5.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.75V | |
| Type | N-Channel |
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Caratteristiche
Traduzione AI
- R θJA is measured with the device mounted on a 1 in², 2 oz copper FR-4 board in still air (TA = 25°C). Power dissipation PDSM is based on RθJA at t ≤ 10s and maximum allowable junction temperature of 150°C. The value in any specific application depends on the user's actual board design.
- Power dissipation PD is based on TJ(MAX) = 150°C, using junction-to-case thermal resistance, which is more useful for setting maximum power dissipation limits when additional heatsinking is employed.
- Single pulse width is limited by junction temperature TJ(MAX) = 150°C.
- RθJA is the sum of junction-to-case thermal resistance RθJC and case-to-ambient thermal resistance.
- Static characteristics in Figures 1 through 6 are obtained using pulses of less than 300 µs with a maximum duty cycle of 0.5%.
- These curves are based on junction-to-case thermal impedance measured with the device mounted on a large heatsink, assuming TJ(MAX) = 150°C. The SOA curves provide single-pulse ratings.
- Maximum current rating is package limited.
- These tests are performed with the device mounted on a 1 in², 2 oz copper FR-4 board in still air (TA = 25°C).
- L = 100uH, Fsw = 1Hz, Tj ≤ 150°C achieved by repetitive UIS
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Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 1.9366 | $ 1.94 |
| 200+ | $ 0.7731 | $ 154.62 |
| 500+ | $ 0.7473 | $ 373.65 |
| 1,000+ | $ 0.7336 | $ 733.60 |
Package Standard3000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | DFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 345pF | |
| Current - Continuous Drain(Id) | 48A | |
| Ciss-Input Capacitance | 4.525nF | |
| Pd - Power Dissipation | 113.5W | |
| Reverse Transfer Capacitance (Crss) | 22.5pF | |
| RDS(on) | 5.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.75V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | DFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 345pF | |
| Current - Continuous Drain(Id) | 48A | |
| Ciss-Input Capacitance | 4.525nF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 113.5W | |
| Reverse Transfer Capacitance (Crss) | 22.5pF | |
| RDS(on) | 5.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.75V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- R θJA is measured with the device mounted on a 1 in², 2 oz copper FR-4 board in still air (TA = 25°C). Power dissipation PDSM is based on RθJA at t ≤ 10s and maximum allowable junction temperature of 150°C. The value in any specific application depends on the user's actual board design.
- Power dissipation PD is based on TJ(MAX) = 150°C, using junction-to-case thermal resistance, which is more useful for setting maximum power dissipation limits when additional heatsinking is employed.
- Single pulse width is limited by junction temperature TJ(MAX) = 150°C.
- RθJA is the sum of junction-to-case thermal resistance RθJC and case-to-ambient thermal resistance.
- Static characteristics in Figures 1 through 6 are obtained using pulses of less than 300 µs with a maximum duty cycle of 0.5%.
- These curves are based on junction-to-case thermal impedance measured with the device mounted on a large heatsink, assuming TJ(MAX) = 150°C. The SOA curves provide single-pulse ratings.
- Maximum current rating is package limited.
- These tests are performed with the device mounted on a 1 in², 2 oz copper FR-4 board in still air (TA = 25°C).
- L = 100uH, Fsw = 1Hz, Tj ≤ 150°C achieved by repetitive UIS
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| XRS100N10LF | XNRUSEMI | Simili | PDFN-8L(5x6) | 4,221 | $0.3418 $0.3597 | ||
| AON6220 | AOS | Simili | DFN-8(5x6) | 21,440 | $ 0.816 | ||
| HKTG48N10 | Guangdong Hottech | Simili | PDFN5x6-8 | 4,383 | $0.4065 $0.4278 | ||
| FH1910G | XIN FEI HONG | Simili | PDFN5x6-8L | 26 | $ 0.8853 | ||
| GT080N10D5 | GOFORD | Simili | DFN5x6-8 | 20 | $ 0.9473 |