Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi NVMFS5C456NWFT1G
| Hersteller | |
| Herst.-Teilenr. | NVMFS5C456NWFT1G |
| LCSC-Nr. | C900436 |
| Verp. | DFN-5(5.9x4.9) |
| Kundennummer | |
| Hauptmerkm. | 55W 40V 80A 4.5mΩ@10V 1 N-channel N-Channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi NVMFS5C456NWFT1G |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 600pF | |
| Ciss-Input Capacitance | 1.15nF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 600pF | |
| Ciss-Input Capacitance | 1.15nF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compact package (5x6 mm) for space-constrained designs
- Low on-resistance RDS(on) to minimize conduction losses
- Low gate charge QG and capacitance to minimize driving losses
- NVMFS5C456NWF – solderable flank option for optical inspection
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, RoHS compliant
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.6524 | $ 1.65 |
| 10+ | $ 1.4056 | $ 14.06 |
| 30+ | $ 1.2508 | $ 37.52 |
| 100+ | $ 1.0914 | $ 109.14 |
| 500+ | $ 1.0209 | $ 510.45 |
| 1,500+ | $ 0.9887 | $ 1483.05 |
Standardgehäuse1500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 600pF | |
| Ciss-Input Capacitance | 1.15nF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 600pF | |
| Ciss-Input Capacitance | 1.15nF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compact package (5x6 mm) for space-constrained designs
- Low on-resistance RDS(on) to minimize conduction losses
- Low gate charge QG and capacitance to minimize driving losses
- NVMFS5C456NWF – solderable flank option for optical inspection
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, RoHS compliant
C900436 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| NVMFS5C456NT1G | onsemi | Ähnliche | DFN-5(5.9x4.9) | 50 | $ 1.9658 | ||
| NVMFS5C456NLAFT1G | onsemi | Ähnliche | DFN-5(5.9x4.9) | 7 | $ 3.441 | ||
| NVMFWS2D9N04XMT1G | onsemi | Ähnliche | DFNW-5(5x6) | 25 | $ 2.8773 | ||
| NVMFS5C450NWFAFT1G | onsemi | Ähnliche | DFN-5(5.9x4.9) | 25 | $ 4.96 | ||
| NTMFS5C460NLT1G | onsemi | Ähnliche | DFN-5(5x6) | 111 | $ 0.5913 |