- Pinbelegung
- Footprint
Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi NVBG080N120SC1
| Hersteller | |
| Herst.-Teilenr. | NVBG080N120SC1 |
| LCSC-Nr. | C898818 |
| Verp. | TO-263-7 |
| Kundennummer | |
| Hauptmerkm. | 179W 1.2kV 30A 80mΩ@20V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi NVBG080N120SC1 |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-263-7 | |
| Output Capacitance(Coss) | 79pF | |
| Ciss-Input Capacitance | 1.154nF | |
| Pd - Power Dissipation | 179W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 7.9pF | |
| RDS(on) | 80mΩ@20V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 4.3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-263-7 | |
| Output Capacitance(Coss) | 79pF | |
| Ciss-Input Capacitance | 1.154nF | |
| Pd - Power Dissipation | 179W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 7.9pF | |
| RDS(on) | 80mΩ@20V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 4.3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
SUPERFET III MOSFET is a new high-voltage super junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, the SUPERFET III FAST MOSFET series helps reduce the size and improve the efficiency of various power supply systems.
Merkmale
KI-Übersetzung
- Typical R DS(on) = 80 mΩ
- Ultra-low gate charge (typical Q G(tot) = 56 nC)
- Low effective output capacitance (typical C oss = 79 pF)
- 100% avalanche tested
- AEC-Q101 qualified, PPAP documentation available
- Halogen-free, RoHS compliant per exemption 7a, lead-free 2LI
Anwendungen
KI-Übersetzung
- Automotive on-board chargers
- Automotive DC-DC converters for electric/hybrid vehicles (EV/HEV)
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 22.5027 | $ 22.50 |
| 10+ | $ 21.203 | $ 212.03 |
Standardgehäuse800/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-263-7 | |
| Output Capacitance(Coss) | 79pF | |
| Ciss-Input Capacitance | 1.154nF | |
| Pd - Power Dissipation | 179W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 7.9pF | |
| RDS(on) | 80mΩ@20V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 4.3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-263-7 | |
| Output Capacitance(Coss) | 79pF | |
| Ciss-Input Capacitance | 1.154nF | |
| Pd - Power Dissipation | 179W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 7.9pF | |
| RDS(on) | 80mΩ@20V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 4.3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
SUPERFET III MOSFET is a new high-voltage super junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, the SUPERFET III FAST MOSFET series helps reduce the size and improve the efficiency of various power supply systems.
Merkmale
KI-Übersetzung
- Typical R DS(on) = 80 mΩ
- Ultra-low gate charge (typical Q G(tot) = 56 nC)
- Low effective output capacitance (typical C oss = 79 pF)
- 100% avalanche tested
- AEC-Q101 qualified, PPAP documentation available
- Halogen-free, RoHS compliant per exemption 7a, lead-free 2LI
Anwendungen
KI-Übersetzung
- Automotive on-board chargers
- Automotive DC-DC converters for electric/hybrid vehicles (EV/HEV)
C898818 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| NTBG080N120SC1 | onsemi | Ähnliche | D2PAK-7 | 0 | $ 11.0378 | ||
| ADG120N080G2 | ANHI | Ähnliche | TO-263-7L | 0 | $ 22.2567 | ||
| AIMBG120R040M1XTMA1 | Infineon | Ähnliche | TO-263-7-12 | 0 | $ 17.7962 | ||
| SCT3080KW7TL | ROHM | Ähnliche | TO-263-7 | 0 | $ 28.5716 | ||
| SCT4036KW7TL | ROHM | Ähnliche | TO-263-7L | 0 | $ 9.1242 |