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Modelli EDAEasyEDA
onsemi FDWS9520L-F085
| Produttore | |
| Cod. Prod. | FDWS9520L-F085 |
| Cod. LCSC | C891136 |
| Imballo | PQFN-8(5.8x4.9) |
| Numero Cliente | |
| Attr. chiave | 3W 40V 20A 10.4mΩ@10V 2 P-Channel P-Channel PQFN-8(5.8x4.9) Single FETs, MOSFETs |
| Scheda Tecnica | onsemi FDWS9520L-F085 |
| Parti alternative | 1 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | PQFN-8(5.8x4.9) | |
| Output Capacitance(Coss) | 940pF | |
| Ciss-Input Capacitance | 2.37nF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 10.4mΩ@10V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | PQFN-8(5.8x4.9) | |
| Output Capacitance(Coss) | 940pF | |
| Ciss-Input Capacitance | 2.37nF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 10.4mΩ@10V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
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Descrizione
Traduzione AI
The FDMS0312S is designed to minimize losses in power conversion applications. Combining advances in silicon and packaging technology, it achieves the lowest on-state drain-to-source resistance (rDS(on)) while maintaining excellent switching performance. The device also benefits from an efficient monolithic Schottky body diode.
Caratteristiche
Traduzione AI
- Compact 5x6 mm package for space-constrained designs
- Low RDS(on) minimizes conduction losses
- Low gate charge (QG) and capacitance minimize driving losses
- Solderable side wings for optical inspection
- AEC-Q101 qualified with PPAP documentation available
- Lead-free, halogen-free/BFR-free, RoHS compliant
Applicazioni
Traduzione AI
- Synchronous rectifier for DC/DC converters
- Notebook Vcore/GPU low-side switch
- Network point-of-load low-side switch
- Desktop
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Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.8881 | $ 0.89 |
| 10+ | $ 0.72 | $ 7.20 |
| 30+ | $ 0.6352 | $ 19.06 |
| 100+ | $ 0.552 | $ 55.20 |
| 500+ | $ 0.5011 | $ 250.55 |
| 1,000+ | $ 0.4764 | $ 476.40 |
Package Standard3000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | PQFN-8(5.8x4.9) | |
| Output Capacitance(Coss) | 940pF | |
| Ciss-Input Capacitance | 2.37nF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 10.4mΩ@10V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | PQFN-8(5.8x4.9) | |
| Output Capacitance(Coss) | 940pF | |
| Ciss-Input Capacitance | 2.37nF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 10.4mΩ@10V | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The FDMS0312S is designed to minimize losses in power conversion applications. Combining advances in silicon and packaging technology, it achieves the lowest on-state drain-to-source resistance (rDS(on)) while maintaining excellent switching performance. The device also benefits from an efficient monolithic Schottky body diode.
Caratteristiche
Traduzione AI
- Compact 5x6 mm package for space-constrained designs
- Low RDS(on) minimizes conduction losses
- Low gate charge (QG) and capacitance minimize driving losses
- Solderable side wings for optical inspection
- AEC-Q101 qualified with PPAP documentation available
- Lead-free, halogen-free/BFR-free, RoHS compliant
Applicazioni
Traduzione AI
- Synchronous rectifier for DC/DC converters
- Notebook Vcore/GPU low-side switch
- Network point-of-load low-side switch
- Desktop
C891136 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| HSBA4315 | HUASHUO | Simili | PRPAK-8(5x6) | 2,981 | $ 0.6977 |