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Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi FDMC012N03
| Hersteller | |
| Herst.-Teilenr. | FDMC012N03 |
| LCSC-Nr. | C890921 |
| Verp. | Power-33-8 |
| Kundennummer | |
| Hauptmerkm. | 64W 30V 35A 1.23mΩ@10V 1 N-channel N-Channel Power-33-8 Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi FDMC012N03 |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power-33-8 | |
| Output Capacitance(Coss) | 1.44nF | |
| Ciss-Input Capacitance | 8.183nF | |
| Pd - Power Dissipation | 64W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 132pF | |
| RDS(on) | 1.23mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power-33-8 | |
| Output Capacitance(Coss) | 1.44nF | |
| Ciss-Input Capacitance | 8.183nF | |
| Pd - Power Dissipation | 64W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 132pF | |
| RDS(on) | 1.23mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
This N-channel MOSFET is manufactured using an advanced power trench process, specifically designed to minimize on-resistance while maintaining superior switching performance.
Merkmale
KI-Übersetzung
- Max r<sub>DS(on)</sub> = 1.23 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 35 A
- Max r<sub>DS(on)</sub> = 1.46 mΩ at V<sub>GS</sub> = 4.5 V, I<sub>D</sub> = 32 A
- High-performance technology for ultra-low r<sub>DS(on)</sub>
- Lead-free terminals
- RoHS compliant
Anwendungen
KI-Übersetzung
- DC-DC Conversion
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.6782 | $ 1.68 |
| 10+ | $ 1.4233 | $ 14.23 |
| 30+ | $ 1.2406 | $ 37.22 |
| 100+ | $ 1.0825 | $ 108.25 |
| 500+ | $ 1.0119 | $ 505.95 |
| 1,000+ | $ 0.9812 | $ 981.20 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power-33-8 | |
| Output Capacitance(Coss) | 1.44nF | |
| Ciss-Input Capacitance | 8.183nF | |
| Pd - Power Dissipation | 64W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 132pF | |
| RDS(on) | 1.23mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power-33-8 | |
| Output Capacitance(Coss) | 1.44nF | |
| Ciss-Input Capacitance | 8.183nF | |
| Pd - Power Dissipation | 64W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 132pF | |
| RDS(on) | 1.23mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This N-channel MOSFET is manufactured using an advanced power trench process, specifically designed to minimize on-resistance while maintaining superior switching performance.
Merkmale
KI-Übersetzung
- Max r<sub>DS(on)</sub> = 1.23 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 35 A
- Max r<sub>DS(on)</sub> = 1.46 mΩ at V<sub>GS</sub> = 4.5 V, I<sub>D</sub> = 32 A
- High-performance technology for ultra-low r<sub>DS(on)</sub>
- Lead-free terminals
- RoHS compliant
Anwendungen
KI-Übersetzung
- DC-DC Conversion
C890921 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| AONR34332C | AOS | Ähnliche | DFN-8(3x3) | 82 | $ 0.5223 | ||
| TPM30100ND8 | TECH PUBLIC | Ähnliche | PDFN-8L(3x3) | 160 | $0.3499 $0.3683 | ||
| ZC2R2TG | DOINGTER | Ähnliche | DFN-8(3x3) | 970 | $ 0.2193 | ||
| MOT3148J | MOT | Ähnliche | PDFN-8L(3x3) | 760 | $ 0.1464 | ||
| RQ3E130BNTB-HXY | HXY MOSFET | Ähnliche | DFN-8L(3x3) | 85 | $0.2631 $0.3288 |