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EDA 모델EasyEDA
JSMSEMI AO4409-JSM
| 제조업체 | JSMSEMIAsian Brands |
| 제조사 품번 | AO4409-JSM |
| LCSC 번호 | C7529463 |
| 포장 | SOP-8 |
| 고객 번호 | |
| 주요 제원 | MOSFET P-CH 30V 14A SOP-8 |
| 데이터시트 | JSMSEMI AO4409-JSM |
| RoHS 준수 | 6개 문서 이용 가능 |
| 대체 부품 | 3 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | JSMSEMI | |
| 포장 | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 577pF | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 425pF | |
| RDS(on) | 10mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.887nF | |
| Gate Charge(Qg) | 37.08nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | JSMSEMI | |
| 포장 | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 577pF | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 425pF | |
| RDS(on) | 10mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.887nF | |
| Gate Charge(Qg) | 37.08nC | |
| Vgs | ±20V | |
| Type | P-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
The 4409 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching
주요 특징
AI 번역
- -30V/-15A, RDS(ON)=8mΩ (typ.)@VGS=-10V
- -30V/-10A, RDS(ON)=10mΩ (typ.)@VGS=-4.5V
- Super high design for extremely low RDS(ON)
- Exceptional on-resistance and Maximum DC current capability
- Full RoHS compliance
- SOP8 package design
응용 분야
AI 번역
- High Frequency Point-of-Load Synchronous
- Newworking DC-DC Power System
- Load Switch
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
재고 있음: 4,030
4,030 재고 있음, 당일 발송
최소값: 5배수: 5판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가 | 총액 |
|---|---|---|
| 5+ | $ 0.1858$ 0.1766 | $ 0.88 |
| 50+ | $ 0.1459$ 0.1387 | $ 6.94 |
| 150+ | $ 0.1288$ 0.1224 | $ 18.36 |
| 500+ | $ 0.1075$ 0.1022 | $ 51.10 |
| 3,000+ | $ 0.098$ 0.0931 | $ 279.30 |
| 6,000+ | $ 0.0923$ 0.0877 | $ 526.20 |
표준 패키지3000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | JSMSEMI | |
| 포장 | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 577pF | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 425pF | |
| RDS(on) | 10mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.887nF | |
| Gate Charge(Qg) | 37.08nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | JSMSEMI | |
| 포장 | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 577pF | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 425pF | |
| RDS(on) | 10mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.887nF | |
| Gate Charge(Qg) | 37.08nC | |
| Vgs | ±20V | |
| Type | P-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
The 4409 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching
주요 특징
AI 번역
- -30V/-15A, RDS(ON)=8mΩ (typ.)@VGS=-10V
- -30V/-10A, RDS(ON)=10mΩ (typ.)@VGS=-4.5V
- Super high design for extremely low RDS(ON)
- Exceptional on-resistance and Maximum DC current capability
- Full RoHS compliance
- SOP8 package design
응용 분야
AI 번역
- High Frequency Point-of-Load Synchronous
- Newworking DC-DC Power System
- Load Switch
C7529463 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| AO4447A | JSMSEMI | SOP-8 | 2,505 | $ 0.1206 | ||
| AO4407A | JSMSEMI | SOP-8 | 8,155 | $0.1596 $0.168 | ||
| RSS090P03-JSM | JSMSEMI | SOP-8 | 1,545 | $0.1889 $0.1988 |