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EDA-ModelleEasyEDA
NH NSS085N100S
| Hersteller | NHAsian Brands |
| Herst.-Teilenr. | NSS085N100S |
| LCSC-Nr. | C7427705 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 100V 100A TO-252 |
| Datenblatt | NH NSS085N100S |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NH | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 820pF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 2nF | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss) | 80pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NH | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 820pF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 2nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss) | 80pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
N-channel 100V Enhancement Mode Power MOSFET
Merkmale
KI-Übersetzung
- Advanced trench MOSFET technology
- Low on-resistance RDS(ON)
- Ultra-low gate charge
- RoHS compliant
- 100% tested for single-pulse avalanche energy and gate resistance
- High power and current handling capability
Anwendungen
KI-Übersetzung
- PD Charger V-BUS
- Switching Power Supply Secondary-Side Synchronous Rectifier
- Motherboard/GPU Core Voltage
- Brushless DC Motor Driver
- Point-of-Load Applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 17,495
17,495 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.3889 | $ 1.94 |
| 50+ | $ 0.3076 | $ 15.38 |
| 150+ | $ 0.2728 | $ 40.92 |
| 500+ | $ 0.2293 | $ 114.65 |
| 2,500+ | $ 0.21 | $ 525.00 |
| 5,000+ | $ 0.1984 | $ 992.00 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NH | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 820pF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 2nF | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss) | 80pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NH | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 820pF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 2nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss) | 80pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
N-channel 100V Enhancement Mode Power MOSFET
Merkmale
KI-Übersetzung
- Advanced trench MOSFET technology
- Low on-resistance RDS(ON)
- Ultra-low gate charge
- RoHS compliant
- 100% tested for single-pulse avalanche energy and gate resistance
- High power and current handling capability
Anwendungen
KI-Übersetzung
- PD Charger V-BUS
- Switching Power Supply Secondary-Side Synchronous Rectifier
- Motherboard/GPU Core Voltage
- Brushless DC Motor Driver
- Point-of-Load Applications
C7427705 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| NSH045N100S | NH | Ähnliche | TO-252 | 2,307 | $ 0.6654 |