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VISHAY SI2309CDS-T1-BE3
| Produttore | |
| Cod. Prod. | SI2309CDS-T1-BE3 |
| Cod. LCSC | C7360561 |
| Imballo | SOT-23(TO-236) |
| Numero Cliente | |
| Attr. chiave | MOSFET P-CH 60V 1.2A 1.6A SOT-23(TO-236) |
| Scheda Tecnica | VISHAY SI2309CDS-T1-BE3 |
| Parti alternative | 5 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.2A;1.6A | |
| Ciss-Input Capacitance | 210pF | |
| Pd - Power Dissipation | 1W;1.7W | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 345mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.2A;1.6A |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 210pF | |
| Pd - Power Dissipation | 1W;1.7W | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 345mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - |
Descrizione
These N-channel enhancement-mode FETs are manufactured using a proprietary high cell density DMOS technology. These devices are designed to minimize on-resistance while providing rugged, reliable, and fast switching performance. They are suitable for most applications requiring up to 400mA DC current and are capable of delivering up to 2A of pulsed current. These devices are particularly well-suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Caratteristiche
- Halogen-free Option Available TrenchFET Power MOSFET
Applicazioni
- Load Switch
- P-Channel MOSFET
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.6927 | $ 0.69 |
| 10+ | $ 0.5614 | $ 5.61 |
| 30+ | $ 0.4974 | $ 14.92 |
| 100+ | $ 0.4317 | $ 43.17 |
| 500+ | $ 0.394 | $ 197.00 |
| 1,000+ | $ 0.3726 | $ 372.60 |
Package Standard3000/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.2A;1.6A | |
| Ciss-Input Capacitance | 210pF | |
| Pd - Power Dissipation | 1W;1.7W | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 345mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.2A;1.6A |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 210pF | |
| Pd - Power Dissipation | 1W;1.7W | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 345mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - |
Descrizione
These N-channel enhancement-mode FETs are manufactured using a proprietary high cell density DMOS technology. These devices are designed to minimize on-resistance while providing rugged, reliable, and fast switching performance. They are suitable for most applications requiring up to 400mA DC current and are capable of delivering up to 2A of pulsed current. These devices are particularly well-suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Caratteristiche
- Halogen-free Option Available TrenchFET Power MOSFET
Applicazioni
- Load Switch
- P-Channel MOSFET
C7360561 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| SI2309CDS-T1-E3 | VISHAY | Simili | SOT-23 | 7,160 | $ 0.3066 | ||
| DMP6350SQ-13 | DIODES | Simili | SOT-23-3 | 100 | $ 0.8971 | ||
| SQ2309ES-T1_GE3 | VISHAY | Simili | SOT-23 | 6,450 | $ 0.4498 | ||
| SL1003P | Slkor | Simili | SOT-23-3L | 10 | $ 0.0615 | ||
| SI2309CDS-T1-GE3 | VISHAY | Simili | SOT-23-3 | 49,500 | $ 0.1766 |