NTE Electronics NTE27

제조업체	NTE Electronics
제조사 품번	NTE27
LCSC 번호	C7250236
포장	TO-3
고객 번호
주요 제원	45V 60 60A PNP TO-3 Single Bipolar Transistors
데이터시트	NTE Electronics NTE27

제품 사양

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	NTE Electronics
포장	TO-3
Current - Collector Cutoff	15mA
Operating Temperature	-65℃~+110℃
Transition frequency(fT)	2kHz
Collector - Emitter Voltage VCEO	45V
Emitter-Base Voltage VEBO	30V
DC Current Gain	60
Pd - Power Dissipation	170W
Current - Collector(Ic)	60A
Configuration	-
Number	-
type	PNP
Vce Saturation(VCE(sat))	300mV

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	NTE Electronics
포장	TO-3
Current - Collector Cutoff	15mA
Operating Temperature	-65℃~+110℃
Transition frequency(fT)	2kHz
Collector - Emitter Voltage VCEO	45V
Emitter-Base Voltage VEBO	30V

AI 번역

NTE27 is a PNP germanium power transistor designed for high-current applications requiring high gain and low saturation voltage.

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품절

재입고 알림

최소값: 1배수: 1판매 단위: Piece

BOM 목록에 추가

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전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	NTE Electronics
포장	TO-3
Current - Collector Cutoff	15mA
Operating Temperature	-65℃~+110℃
Transition frequency(fT)	2kHz
Collector - Emitter Voltage VCEO	45V
Emitter-Base Voltage VEBO	30V
DC Current Gain	60
Pd - Power Dissipation	170W
Current - Collector(Ic)	60A
Configuration	-
Number	-
type	PNP
Vce Saturation(VCE(sat))	300mV

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	NTE Electronics
포장	TO-3
Current - Collector Cutoff	15mA
Operating Temperature	-65℃~+110℃
Transition frequency(fT)	2kHz
Collector - Emitter Voltage VCEO	45V
Emitter-Base Voltage VEBO	30V

AI 번역

NTE27 is a PNP germanium power transistor designed for high-current applications requiring high gain and low saturation voltage.