GeneSiC Semiconductor MBR20040CT
| Producent | |
| Nr części prod. | MBR20040CT |
| Nr LCSC | C7224960 |
| Opak. | - |
| Numer Klienta | |
| Klucz. cechy | 1 Pair Common Cathode 200A 40V 650mV@100A Diode Arrays RoHS |
| Karta Katalogowa | GeneSiC Semiconductor MBR20040CT |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | GeneSiC Semiconductor | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 40V | |
| Voltage - Forward(Vf@If) | 650mV@100A | |
| Reverse Leakage Current (Ir) | 1mA@40V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | GeneSiC Semiconductor | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Cathode |
| Typ | Opis | |
|---|---|---|
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 40V | |
| Voltage - Forward(Vf@If) | 650mV@100A | |
| Reverse Leakage Current (Ir) | 1mA@40V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- High surge capability
- Reverse repetitive peak voltage (VRRM) range: 20 to 40V
- Insensitive to ESD
- Dual tower package
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 198.939 | $ 198.94 |
| 200+ | $ 79.3783 | $ 15875.66 |
| 480+ | $ 76.7264 | $ 36828.67 |
| 1,000+ | $ 75.4155 | $ 75415.50 |
Standardowa Obudowa40/Full Bag | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | GeneSiC Semiconductor | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 40V | |
| Voltage - Forward(Vf@If) | 650mV@100A | |
| Reverse Leakage Current (Ir) | 1mA@40V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | GeneSiC Semiconductor | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Cathode |
| Typ | Opis | |
|---|---|---|
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 40V | |
| Voltage - Forward(Vf@If) | 650mV@100A | |
| Reverse Leakage Current (Ir) | 1mA@40V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- High surge capability
- Reverse repetitive peak voltage (VRRM) range: 20 to 40V
- Insensitive to ESD
- Dual tower package
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

