Abbildung ähnlich
EDA-ModelleEasyEDA
Solid State System 2N6040
| Hersteller | Solid State SystemAsian Brands |
| Herst.-Teilenr. | 2N6040 |
| LCSC-Nr. | C6803463 |
| Verp. | TO-220 |
| Kundennummer | |
| Hauptmerkm. | 60V 1000 8A PNP TO-220 Single Bipolar Transistors RoHS |
| Datenblatt | Solid State System 2N6040 |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Solid State System | |
| Verp. | TO-220 | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Current - Collector Cutoff | 500uA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Current - Collector(Ic) | 8A | |
| Pd - Power Dissipation | 75W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Solid State System | |
| Verp. | TO-220 | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Current - Collector Cutoff | 500uA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | - |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Current - Collector(Ic) | 8A | |
| Pd - Power Dissipation | 75W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 4V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Designed specifically for general-purpose amplifier and low-speed switching applications
Merkmale
KI-Übersetzung
- Collector-emitter sustaining voltage: VCEO(SUS) = 60V (min) — 2N6040, 2N6043; = 80V (min) — 2N6041, 2N6044; = 100V (min) — 2N6042, 2N6045
- Collector-emitter saturation voltage: VCE(sat) = 2.0V (max) @ IC = 4.0A — 2N6040, 41, 2N6043, 44; = 2.0V (max) @ IC = 4.0A — 2N6042, 2N6045
- Monolithic construction with built-in base-emitter shunt resistor
Anwendungen
KI-Übersetzung
General-purpose amplifier and low-speed switching applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.9672 | $ 1.97 |
| 200+ | $ 0.7851 | $ 157.02 |
| 500+ | $ 0.7593 | $ 379.65 |
| 1,000+ | $ 0.7457 | $ 745.70 |
Standardgehäuse10/Full Bag | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Solid State System | |
| Verp. | TO-220 | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Current - Collector Cutoff | 500uA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Current - Collector(Ic) | 8A | |
| Pd - Power Dissipation | 75W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Solid State System | |
| Verp. | TO-220 | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Current - Collector Cutoff | 500uA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | - |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Current - Collector(Ic) | 8A | |
| Pd - Power Dissipation | 75W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 4V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Designed specifically for general-purpose amplifier and low-speed switching applications
Merkmale
KI-Übersetzung
- Collector-emitter sustaining voltage: VCEO(SUS) = 60V (min) — 2N6040, 2N6043; = 80V (min) — 2N6041, 2N6044; = 100V (min) — 2N6042, 2N6045
- Collector-emitter saturation voltage: VCE(sat) = 2.0V (max) @ IC = 4.0A — 2N6040, 41, 2N6043, 44; = 2.0V (max) @ IC = 4.0A — 2N6042, 2N6045
- Monolithic construction with built-in base-emitter shunt resistor
Anwendungen
KI-Übersetzung
General-purpose amplifier and low-speed switching applications
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |