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Infineon S25HS512TFABHV013

Producent
Nr części prod.
S25HS512TFABHV013
Nr LCSC
C6670702
Opak.
BGA-24(6x8)
Numer Klienta
Klucz. cechy
512Mbit 1.7V~2V 166MHz SPI BGA-24(6x8) Memory RoHS
Karta KatalogowaInfineon S25HS512TFABHV013
Części alternatywne5
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
Szt.Cena jedn.(Tylko do wglądu)Suma całkowita
1+$ 20.9995$ 21.00
200+$ 8.3792$ 1675.84
500+$ 8.0998$ 4049.90
1,000+$ 7.9617$ 7961.70
Standardowa Obudowa2500/Full Reel
Lepsza cena za większą ilość?
$

Specyfikacje Produktu

Wszystko
TypOpis
KategoriaIntegrated Circuits (ICs)/Memory/Memory
ProducentInfineon
Opak.BGA-24(6x8)
Operating Temperature-
FeaturesPower-on reset;Hardware write protection;ECC error correction
Memory Size512Mbit
Voltage - Supply1.7V~2V
Program / Erase Cycles1,280,000 Cycles
Clock Frequency166MHz
Data Retention - TDR (Year)25 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Standby Supply Current0.011mA
InterfaceSPI

Funkcje

Tłumaczenie AI
  • 45nm technology, 2 bits stored per memory array cell
  • Multiple sector architecture options: uniform (all sectors 256KB), hybrid 1 (top or bottom 32×4KB sectors, remainder 256KB), hybrid 2 (top and bottom 16×4KB sectors each, remainder 256KB)
  • Page program buffer: 256 or 512 bytes
  • 1024-byte (32×32 bytes) one-time programmable Security Silicon region
  • Quad SPI interface supporting multiple protocols (1S-1S-4S, 1S-4S-4S, etc.); SDR up to 83 Mbps (166 MHz clock), DDR up to 102 Mbps (102 MHz clock)
  • Dual SPI interface supporting 1S-2S-2S protocol; SDR up to 41.5 Mbps (166 MHz clock)
  • Standard SPI interface supporting 1S-1S-1S protocol; SDR up to 21 Mbps (166 MHz clock)
  • Functional safety features compliant with ISO 26262 ASIL B, ASIL D ready
  • Endurance Flex architecture with high-endurance and extended data retention partitions
  • Data integrity CRC for memory array error detection
  • Secure boot: reports device initialization failures, detects configuration corruption, and provides recovery options
  • ECC with single-bit error correction and double-bit error detection
  • Sector erase status indicator for power interruption during erase
  • Protection features including legacy memory array and configuration protection, and advanced sector protection at individual sector granularity
  • Auto-boot for immediate memory array access after power-up
  • Hardware reset via CS#, dedicated RESET# pin, or DQ3_RESET# pin
  • SFDP support for device capability and feature discovery
  • Device ID, manufacturer ID, and identification
  • Data integrity: 256Mb main array minimum 640K program/erase cycles; 512Mb: 1.28M cycles; 1Gb: 2.56M cycles; 4KB sectors on all devices minimum 300K program/erase cycles; minimum 25-year data retention
  • Operating voltage: 1.7V to 2.0V (HS-T) or 2.7V to 3.6V (HL-T)
  • Operating temperature: Industrial -40°C to +85°C; Extended Industrial -40°C to +105°C; Automotive AEC-Q100 Grade 3: -40°C to +85°C; Grade 2: -40°C to +105°C; Grade 1: -40°C to +125°C
  • Package options: 256Mb and 512Mb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (6×8 mm), 16-pin SOIC (300mil), 8-contact WSON (6×8 mm); 1Gb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (8×8 mm), 16-pin SOIC (300mil)

Części alternatywne

MPNProducentTyp alternatywnyOpakowanieDostępnośćCena jednostkowa
MT35XU512ABA1G12-0AATmicronPodobneTPBGA-24(6x8)2$ 27.1483
MT35XU512ABA1G12-0AUTmicronPodobneTPBGA-24(6x8)1$ 22.1507
IS25WP512M-RHLEISSIPodobneTFBGA-24(6x8)1$ 19.685
IS25WP512M-RHLA3ISSIPodobneTFBGA-24(6x8)20$ 16.8399
S25HS512TFABHB010InfineonPodobneBGA-24(6x8)0$ 19.836