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Modelos EDAEasyEDA
Transphorm TP65H070LDG-TR
| Fabricante | |
| N.º de pieza fab. | TP65H070LDG-TR |
| Nº LCSC | C6339100 |
| Emb. | PQFN-3(8x8) |
| Número de Cliente | |
| Atrib. clave | 650V 25A 96W 85mΩ@10V 1 N-channel PQFN-3(8x8) Single FETs, MOSFETs RoHS |
| Hoja de Datos | Transphorm TP65H070LDG-TR |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Transphorm | |
| Emb. | PQFN-3(8x8) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 600pF | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss) | 4.5pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.3nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Transphorm | |
| Emb. | PQFN-3(8x8) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 600pF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss) | 4.5pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.3nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The TP65H070L series 650V, 72mΩ GaN FETs are normally-off devices. They combine advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, delivering superior reliability and performance. Compared to silicon devices, Transphorm's GaN devices improve efficiency through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Características
Traducción por IA
- JEDEC-compliant GaN technology
- Dynamic on-resistance (RDS(on) eff) production testing
- Robust design featuring:
- Intrinsic lifetime testing
- Wide gate safety margin
- Transient overvoltage capability
- Ultra-low reverse recovery charge (QRR)
- Reduced crossover losses
- RoHS-compliant, halogen-free package
Aplicaciones
Traducción por IA
- Data Communications - Wide Range of Industrial Applications - Photovoltaic Inverters - Servo Motors
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Transphorm | |
| Emb. | PQFN-3(8x8) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 600pF | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss) | 4.5pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.3nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Transphorm | |
| Emb. | PQFN-3(8x8) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 600pF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss) | 4.5pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.3nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The TP65H070L series 650V, 72mΩ GaN FETs are normally-off devices. They combine advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, delivering superior reliability and performance. Compared to silicon devices, Transphorm's GaN devices improve efficiency through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Características
Traducción por IA
- JEDEC-compliant GaN technology
- Dynamic on-resistance (RDS(on) eff) production testing
- Robust design featuring:
- Intrinsic lifetime testing
- Wide gate safety margin
- Transient overvoltage capability
- Ultra-low reverse recovery charge (QRR)
- Reduced crossover losses
- RoHS-compliant, halogen-free package
Aplicaciones
Traducción por IA
- Data Communications - Wide Range of Industrial Applications - Photovoltaic Inverters - Servo Motors
C6339100 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |