MICROCHIP TN5335N8-G
| Produttore | |
| Cod. Prod. | TN5335N8-G |
| Cod. LCSC | C629199 |
| Imballo | SOT-89-3 |
| Numero Cliente | |
| Attr. chiave | 1.6W 350V 750mA 2V 15Ω@10V 1 N-channel N-Channel SOT-89-3 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | MICROCHIP TN5335N8-G |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 2 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | SOT-89-3 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 350V | |
| Current - Continuous Drain(Id) | 750mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 15Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | SOT-89-3 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 350V | |
| Current - Continuous Drain(Id) | 750mA |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 15Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Descrizione
This low-threshold, enhancement-mode (normally-off) transistor employs a vertical double-diffused metal-oxide-semiconductor (DMOS) structure and Supertex's proven silicon-gate fabrication process. This combination gives the device the power-handling capability of a bipolar transistor, along with the high input impedance and positive temperature coefficient inherent to MOS devices. As with all MOS structures, this device is immune to thermal runaway and thermally induced second breakdown.
Supertex vertical DMOS FETs are ideal for a wide range of switching and amplification applications requiring ultra-low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Caratteristiche
- Low threshold
- High input impedance
- Low input capacitance
- Fast switching speed
- Low on-resistance
- No secondary breakdown
- Low input and output leakage current
- Complementary N-channel and P-channel devices
Applicazioni
- Logic level interface
- TTL and CMOS compatible
- Solid-state relay
- Battery-powered systems
- Photovoltaic drivers
- Analog switches
- General-purpose line drivers
- Telecommunication switches
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.9447 | $ 0.94 |
| 200+ | $ 0.3659 | $ 73.18 |
| 500+ | $ 0.3535 | $ 176.75 |
| 1,000+ | $ 0.3473 | $ 347.30 |
Package Standard2000/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | SOT-89-3 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 350V | |
| Current - Continuous Drain(Id) | 750mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 15Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | SOT-89-3 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 350V | |
| Current - Continuous Drain(Id) | 750mA |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 15Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Descrizione
This low-threshold, enhancement-mode (normally-off) transistor employs a vertical double-diffused metal-oxide-semiconductor (DMOS) structure and Supertex's proven silicon-gate fabrication process. This combination gives the device the power-handling capability of a bipolar transistor, along with the high input impedance and positive temperature coefficient inherent to MOS devices. As with all MOS structures, this device is immune to thermal runaway and thermally induced second breakdown.
Supertex vertical DMOS FETs are ideal for a wide range of switching and amplification applications requiring ultra-low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Caratteristiche
- Low threshold
- High input impedance
- Low input capacitance
- Fast switching speed
- Low on-resistance
- No secondary breakdown
- Low input and output leakage current
- Complementary N-channel and P-channel devices
Applicazioni
- Logic level interface
- TTL and CMOS compatible
- Solid-state relay
- Battery-powered systems
- Photovoltaic drivers
- Analog switches
- General-purpose line drivers
- Telecommunication switches
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| TN2435N8-G | MICROCHIP | Simili | SOT-89-3 | 1 | $ 2.8775 | ||
| TN2540N8-G | MICROCHIP | Simili | SOT-89 | 0 | $ 4.022 |