- Pinbelegung
- Footprint
Infineon IPT65R125CFD7XTMA1
| Hersteller | |
| Herst.-Teilenr. | IPT65R125CFD7XTMA1 |
| LCSC-Nr. | C6280047 |
| Verp. | HSOF-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 650V 23A HSOF-8 |
| Datenblatt | Infineon IPT65R125CFD7XTMA1 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | HSOF-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 23A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 656pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.566nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | HSOF-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 23A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 656pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.566nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Type | N-Channel |
Beschreibung
The latest 650 V CoolMOS CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS CFD7 offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions.
Merkmale
- Ultra-fast body diode
- 650V break down voltage
- Best-in-class RDS(on)
- Reduced switching losses
- Low RDS(on) dependency over temperature
Anwendungen
- Soft Switching topologies
- phase-shift full-bridge (ZVS), LLC Applications – Server
- Telecom
- EV Charging
- Solar
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 3.5823 | $ 3.58 |
| 10+ | $ 3.5174 | $ 35.17 |
| 30+ | $ 3.4751 | $ 104.25 |
| 100+ | $ 3.4329 | $ 343.29 |
Standardgehäuse2000/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | HSOF-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 23A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 656pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.566nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | HSOF-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 23A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 656pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.566nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Type | N-Channel |
Beschreibung
The latest 650 V CoolMOS CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS CFD7 offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions.
Merkmale
- Ultra-fast body diode
- 650V break down voltage
- Best-in-class RDS(on)
- Reduced switching losses
- Low RDS(on) dependency over temperature
Anwendungen
- Soft Switching topologies
- phase-shift full-bridge (ZVS), LLC Applications – Server
- Telecom
- EV Charging
- Solar
C6280047 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IPT60R080G7 | Infineon | HSOF-8 | 3 | $ 7.9152 | ||
| IMT65R260M1HXUMA1 | Infineon | HSOF-8-1 | 1 | $ 7.5383 | ||
| IPT60R055CFD7XTMA1 | Infineon | HSOF-8 | 5 | $ 10.2514 | ||
| IPT65R033G7XTMA1 | Infineon | HSOF-8 | 1 | $ 28.6232 | ||
| IPT60R105CFD7XTMA1 | Infineon | HSOF-8 | 0 | $ 4.757 | ||
| IPT65R105G7 | Infineon | HSOF-8 | 0 | $ 8.2329 | ||
| IMT65R022M1HXUMA1 | Infineon | HSOF-8-1 | 0 | $ 14.9846 | ||
| IPT65R080CFD7XTMA1 | Infineon | HSOF-8 | 0 | $ 7.5675 | ||
| IPT60R125CFD7XTMA1 | Infineon | HSOF-8 | 0 | $ 4.0207 | ||
| IPT60R090CFD7XTMA1 | Infineon | HSOF-8 | 0 | $ 4.7959 |