ADI HMC659

The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8 V supply. Gain flatness is excellent at ±0.5 dB from DC to 10 GHz making the HMC659 ideal for EW, ECM, Radar and test equipment applications. The HMC659 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip Modules (MCMs).

• P1dB Output Power: +26.5 dBm
• Gain: 19 dB
• Output IP3: +35 dBm
• Supply Voltage: +8 V @ 300 mA
• 50 Ohm Matched Input/Output
• Die Size: 3.115×1.630×0.1 mm

• Telecom Infrastructure
• Microwave Radio & VSAT
• Test Instrumentation
• Fiber Optics