onsemi LE25S20FD-AH
| Hersteller | |
| Herst.-Teilenr. | LE25S20FD-AH |
| LCSC-Nr. | C603107 |
| Verp. | SOIC-8 |
| Kundennummer | |
| Hauptmerkm. | 2Mbit 1.65V~1.95V 40MHz SPI SOIC-8 Memory RoHS |
| Datenblatt | onsemi LE25S20FD-AH |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | onsemi | |
| Verp. | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 2Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 40MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 3ms | |
| Standby Supply Current | 50uA | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | onsemi | |
| Verp. | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 2Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 40MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 3ms | |
| Standby Supply Current | 50uA | |
| Interface | SPI |
Beschreibung
The LE25S20FD is a SPI bus flash memory device with a 2M bit (256K x 8 bit) configuration. It uses a single 1.8 V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S20FD is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S20FD also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.
Merkmale
- Read/write operations enabled by single 1.8 V power supply: 1.65 to 1.95 V supply voltage range
- Operating frequency: 40 MHz
- Temperature range: -40 to 85 ℃
- Serial interface: SPI mode 0, mode 3 supported
- Sector size: 4K bytes/small sector, 64K bytes/sector
- Small sector erase, sector erase, chip erase functions
- Page program function (256 bytes/page)
- Block protect function
- Highly reliable read/write
- Number of rewrite times: 100,000 times
- Small sector erase time: 40 ms (typ), 150 ms (max)
- Sector erase time: 80 ms (typ), 250 ms (max)
- Chip erase time: 300 ms (typ), 3.0 s (max)
- Page program time: 3.0 ms / 256 bytes (typ), 3.5 ms/256 bytes (max)
- Status functions: Ready / busy information, protect information
- Data retention period: 20 years
- Package: VSOIC8 NB
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | onsemi | |
| Verp. | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 2Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 40MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 3ms | |
| Standby Supply Current | 50uA | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | onsemi | |
| Verp. | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 2Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 40MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 3ms | |
| Standby Supply Current | 50uA | |
| Interface | SPI |
Beschreibung
The LE25S20FD is a SPI bus flash memory device with a 2M bit (256K x 8 bit) configuration. It uses a single 1.8 V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S20FD is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S20FD also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.
Merkmale
- Read/write operations enabled by single 1.8 V power supply: 1.65 to 1.95 V supply voltage range
- Operating frequency: 40 MHz
- Temperature range: -40 to 85 ℃
- Serial interface: SPI mode 0, mode 3 supported
- Sector size: 4K bytes/small sector, 64K bytes/sector
- Small sector erase, sector erase, chip erase functions
- Page program function (256 bytes/page)
- Block protect function
- Highly reliable read/write
- Number of rewrite times: 100,000 times
- Small sector erase time: 40 ms (typ), 150 ms (max)
- Sector erase time: 80 ms (typ), 250 ms (max)
- Chip erase time: 300 ms (typ), 3.0 s (max)
- Page program time: 3.0 ms / 256 bytes (typ), 3.5 ms/256 bytes (max)
- Status functions: Ready / busy information, protect information
- Data retention period: 20 years
- Package: VSOIC8 NB
C603107 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| XT25W02ESOIGU | XTX | Ähnliche | SO-8 | 70 | $ 0.1691 | ||
| AT45DB021E-SSHN-B | RENESAS | Ähnliche | SOIC-8 | 49 | $ 2.4886 | ||
| AT45DB021E-SSHN-T | RENESAS | Ähnliche | SOIC-8 | 262 | $ 0.4738 | ||
| AT45DB021E-SSHN2B-T | RENESAS | Ähnliche | SOIC-8 | 25 | $ 1.7367 | ||
| AT25PE20-SSHN-T | RENESAS | Ähnliche | SOIC-8 | 100 | $ 0.9522 |

