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onsemi LE25S20FD-AH

Hersteller
Herst.-Teilenr.
LE25S20FD-AH
LCSC-Nr.
C603107
Verp.
SOIC-8
Kundennummer
Hauptmerkm.
2Mbit 1.65V~1.95V 40MHz SPI SOIC-8 Memory RoHS
Datenblattonsemi LE25S20FD-AH
RoHS-Konformität3 Dokumente verfügbar
Alternativteile5
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Derzeit nicht verfügbar
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece

Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Memory/Memory
Herstelleronsemi
Verp.SOIC-8
Operating Temperature-40℃~+85℃
Features-
Memory Size2Mbit
Voltage - Supply1.65V~1.95V
Program / Erase Cycles100,000 cycles
Clock Frequency40MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)3ms
Standby Supply Current50uA
InterfaceSPI

Beschreibung

KI-Übersetzung

The LE25S20FD is a SPI bus flash memory device with a 2M bit (256K x 8 bit) configuration. It uses a single 1.8 V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S20FD is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S20FD also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.

Merkmale

KI-Übersetzung
  • Read/write operations enabled by single 1.8 V power supply: 1.65 to 1.95 V supply voltage range
  • Operating frequency: 40 MHz
  • Temperature range: -40 to 85 ℃
  • Serial interface: SPI mode 0, mode 3 supported
  • Sector size: 4K bytes/small sector, 64K bytes/sector
  • Small sector erase, sector erase, chip erase functions
  • Page program function (256 bytes/page)
  • Block protect function
  • Highly reliable read/write
    • Number of rewrite times: 100,000 times
    • Small sector erase time: 40 ms (typ), 150 ms (max)
    • Sector erase time: 80 ms (typ), 250 ms (max)
    • Chip erase time: 300 ms (typ), 3.0 s (max)
    • Page program time: 3.0 ms / 256 bytes (typ), 3.5 ms/256 bytes (max)
  • Status functions: Ready / busy information, protect information
  • Data retention period: 20 years
  • Package: VSOIC8 NB

Alternativteile

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AT45DB021E-SSHN-TRENESASÄhnlicheSOIC-8262$ 0.4738
AT45DB021E-SSHN2B-TRENESASÄhnlicheSOIC-825$ 1.7367
AT25PE20-SSHN-TRENESASÄhnlicheSOIC-8100$ 0.9522
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