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DIODES DMT15H017LPSW-13 product image
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DIODES DMT15H017LPSW-13

Fabricante
DIODES
N.º de pieza fab.
DMT15H017LPSW-13
Nº LCSC
C6021903
Emb.
PowerDI5060-8
Número de Cliente
Atrib. clave
150V 17.5mΩ@10V 1 N-channel N-Channel PowerDI5060-8 Single FETs, MOSFETs RoHS
Hoja de DatosDIODES DMT15H017LPSW-13
Cumplimiento RoHS3 documentos disponibles
Piezas alternativas5
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días

Especificaciones del Producto

Todo
TipoDescripción
CategoríaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
FabricanteDIODES
Emb.PowerDI5060-8
Output Capacitance(Coss)211pF
Ciss-Input Capacitance3.369nF
Pd - Power Dissipation1.3W;89W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage150V
Current - Continuous Drain(Id)9.4A;58A
Reverse Transfer Capacitance (Crss)6.7pF
RDS(on)17.5mΩ@10V
Number1 N-channel
Gate Charge(Qg)50nC@10V
Vgs±20V
TypeN-Channel
Gate Threshold Voltage (Vgs(th))2.6V
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Descripción

Traducción por IA

This next-generation N-channel enhancement-mode MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance. The device is ideally suited for notebook battery power management and load switching applications.

Características

Traducción por IA
  • 100% UIS tested in production for enhanced reliability and durability in end applications
  • Thermally efficient package for lower operating temperatures
  • High conversion efficiency
  • Low on-resistance RDS(ON) minimizes conduction losses
  • Low input capacitance
  • Fast switching speed
  • Package height less than 1.1mm, ideal for slim and thin applications (PowerDI)
  • Lead-free surface finish, RoHS compliant
  • Halogen- and antimony-free "Green" device

Aplicaciones

Traducción por IA
  • Synchronous rectification
  • Power switches
  • Class D audio amplifiers