Abbildung ähnlich
EDA-ModelleEasyEDA
Nexperia PUMD2F
| Hersteller | |
| Herst.-Teilenr. | PUMD2F |
| LCSC-Nr. | C553514 |
| Verp. | SOT-363 |
| Kundennummer | |
| Hauptmerkm. | 60 1 NPN Pre-Biased, 1 PNP Pre-Biased 300mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Datenblatt | Nexperia PUMD2F |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | Nexperia | |
| Verp. | SOT-363 | |
| DC Current Gain | 60 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 300mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Current - Collector(Ic) | 100mA | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V | |
| Collector - Emitter Voltage VCEO | 50V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | Nexperia | |
| Verp. | SOT-363 | |
| DC Current Gain | 60 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ |
| Typ | Beschreibung | |
|---|---|---|
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 300mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Current - Collector(Ic) | 100mA | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V | |
| Collector - Emitter Voltage VCEO | 50V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface Mounted Device (SMD) plastic package.
Merkmale
KI-Übersetzung
- 100 mA output current capability
- Built-in bias resistors
- Simplifies circuit design
- Reduces component count
- Reduces pick and place costs
Anwendungen
KI-Übersetzung
- Low current peripheral driver
- Controlling IC inputs
- Replaces general-purpose transistors in digital applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.0865 | $ 0.09 |
| 10+ | $ 0.0687 | $ 0.69 |
| 30+ | $ 0.0599 | $ 1.80 |
| 100+ | $ 0.0532 | $ 5.32 |
| 500+ | $ 0.0479 | $ 23.95 |
| 1,000+ | $ 0.0453 | $ 45.30 |
Standardgehäuse10000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | Nexperia | |
| Verp. | SOT-363 | |
| DC Current Gain | 60 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 300mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Current - Collector(Ic) | 100mA | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V | |
| Collector - Emitter Voltage VCEO | 50V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | Nexperia | |
| Verp. | SOT-363 | |
| DC Current Gain | 60 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ |
| Typ | Beschreibung | |
|---|---|---|
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 300mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Current - Collector(Ic) | 100mA | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V | |
| Collector - Emitter Voltage VCEO | 50V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface Mounted Device (SMD) plastic package.
Merkmale
KI-Übersetzung
- 100 mA output current capability
- Built-in bias resistors
- Simplifies circuit design
- Reduces component count
- Reduces pick and place costs
Anwendungen
KI-Übersetzung
- Low current peripheral driver
- Controlling IC inputs
- Replaces general-purpose transistors in digital applications
C553514 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| NSVMUN5312DW1T2G | onsemi | Ähnliche | SOT-363 | 5 | $ 0.2541 | ||
| PUMD15,115 | Nexperia | Ähnliche | SOT-363 | 350 | $ 0.3505 | ||
| PUMD12,115 | Nexperia | Ähnliche | SOT-363 | 5 | $ 0.0834 | ||
| MUN5331DW1T1G | onsemi | Ähnliche | SOT-363 | 10 | $ 0.2406 | ||
| MUN5313DW1T1G | onsemi | Ähnliche | SOT-363 | 290 | $ 0.0696 |
5 weitere Alternativteile.Alle Ersatzprodukte anzeigen