Zdjęcia poglądowe
Modele EDAEasyEDA
Nexperia PDTA123EM,315
| Producent | |
| Nr części prod. | PDTA123EM,315 |
| Nr LCSC | C552058 |
| Opak. | SOT-883-3 |
| Numer Klienta | |
| Klucz. cechy | 50V 30 100mA 250mW PNP 1 PNP Pre-Biased SOT-883-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Karta Katalogowa | Nexperia PDTA123EM,315 |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@1mA,5V | |
| Operating temperature | -65℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@1mA,5V | |
| Operating temperature | -65℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
PNP resistor-equipped transistor
Funkcje
Tłumaczenie AI
- Built-in bias resistors
- Simplified circuit design
- Reduction of component count
- Reduced pick and place costs
Zastosowania
Tłumaczenie AI
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.0299 | $ 0.03 |
| 10+ | $ 0.0239 | $ 0.24 |
| 30+ | $ 0.0205 | $ 0.62 |
| 100+ | $ 0.0185 | $ 1.85 |
| 500+ | $ 0.0168 | $ 8.40 |
| 1,000+ | $ 0.0159 | $ 15.90 |
Standardowa Obudowa10000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@1mA,5V | |
| Operating temperature | -65℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@1mA,5V | |
| Operating temperature | -65℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
PNP resistor-equipped transistor
Funkcje
Tłumaczenie AI
- Built-in bias resistors
- Simplified circuit design
- Reduction of component count
- Reduced pick and place costs
Zastosowania
Tłumaczenie AI
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver
C552058 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| PDTA114EMB,315 | Nexperia | Podobne | SOT-883-3 | 8,760 | $ 0.0455 | ||
| PDTA123EMB,315 | Nexperia | Podobne | SOT-883-3 | 0 | $ 0.016 | ||
| PDTA113EM,315 | Nexperia | Podobne | SOT-883-3 | 0 | $ 0.0302 | ||
| PDTA124XMB,315 | Nexperia | Podobne | SOT-883-3 | 0 | $ 0.0282 | ||
| PDTA124XM,315 | Nexperia | Podobne | SOT-883-3 | 0 | $ 0.0157 |