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EDA-ModelleEasyEDA
HIMINGWAY HC026N065B4R
| Hersteller | HIMINGWAYAsian Brands |
| Herst.-Teilenr. | HC026N065B4R |
| LCSC-Nr. | C54864536 |
| Verp. | TO247-3L |
| Kundennummer | |
| Hauptmerkm. | 650V 103A 33mΩ TO247-3L Single FETs, MOSFETs |
| Datenblatt | HIMINGWAY HC026N065B4R |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HIMINGWAY | |
| Verp. | TO247-3L | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 179pF | |
| Current - Continuous Drain(Id) | 103A | |
| Ciss-Input Capacitance | 2.109nF | |
| Reverse Transfer Capacitance (Crss) | 13pF | |
| RDS(on) | 33mΩ | |
| Gate Charge(Qg) | 87nC | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HIMINGWAY | |
| Verp. | TO247-3L | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 179pF | |
| Current - Continuous Drain(Id) | 103A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 2.109nF | |
| Reverse Transfer Capacitance (Crss) | 13pF | |
| RDS(on) | 33mΩ | |
| Gate Charge(Qg) | 87nC | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
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Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 3.0995 | $ 3.10 |
| 10+ | $ 2.6595 | $ 26.60 |
| 25+ | $ 2.3985 | $ 59.96 |
| 100+ | $ 2.1342 | $ 213.42 |
| 500+ | $ 2.0127 | $ 1006.35 |
| 1,000+ | $ 1.9569 | $ 1956.90 |
Standardgehäuse25/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HIMINGWAY | |
| Verp. | TO247-3L | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 179pF | |
| Current - Continuous Drain(Id) | 103A | |
| Ciss-Input Capacitance | 2.109nF | |
| Reverse Transfer Capacitance (Crss) | 13pF | |
| RDS(on) | 33mΩ | |
| Gate Charge(Qg) | 87nC | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HIMINGWAY | |
| Verp. | TO247-3L | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 179pF | |
| Current - Continuous Drain(Id) | 103A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 2.109nF | |
| Reverse Transfer Capacitance (Crss) | 13pF | |
| RDS(on) | 33mΩ | |
| Gate Charge(Qg) | 87nC | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
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Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |