TI ISO7710FQDRQ1
| Hersteller | |
| Herst.-Teilenr. | ISO7710FQDRQ1 |
| LCSC-Nr. | C544533 |
| Verp. | SOIC-8 |
| Kundennummer | |
| Hauptmerkm. | High-speed single-channel enhanced digital isolator |
| Datenblatt | TI ISO7710FQDRQ1 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Isolators/Digital Isolators | |
| Hersteller | TI | |
| Verp. | SOIC-8 | |
| Features | Fail-safe output | |
| CMTI(kV/us) | 100kV/us | |
| Propagation Delay(tpd) | 11ns | |
| Number of Channels | 1 | |
| Number of Forward Channels | 1 | |
| Voltage - Supply | 2.25V~5.5V;2.25V~5.5V | |
| Number of Reverse Channels | 0 | |
| Operating Temperature | -40℃~+125℃ | |
| Isolation Voltage(Vrms) | 3000 | |
| Data Rate(Max) | 100Mbps | |
| Default Output | Low Level |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Isolators/Digital Isolators | |
| Hersteller | TI | |
| Verp. | SOIC-8 | |
| Features | Fail-safe output | |
| CMTI(kV/us) | 100kV/us | |
| Propagation Delay(tpd) | 11ns | |
| Number of Channels | 1 |
| Typ | Beschreibung | |
|---|---|---|
| Number of Forward Channels | 1 | |
| Voltage - Supply | 2.25V~5.5V;2.25V~5.5V | |
| Number of Reverse Channels | 0 | |
| Operating Temperature | -40℃~+125℃ | |
| Isolation Voltage(Vrms) | 3000 | |
| Data Rate(Max) | 100Mbps | |
| Default Output | Low Level |
Beschreibung
The ISO7710-Q1 device is a high-performance single-channel digital isolator that provides isolation ratings of 5000 VRMS (DW package) and 3000 VRMS (D package) in accordance with UL 1577. This device is also certified by VDE, TUV, CSA, and CQC. While isolating complementary metal-oxide-semiconductor (CMOS) or low-voltage complementary metal-oxide-semiconductor (LVCMOS) digital I/Os, the ISO7710-Q1 device offers high electromagnetic immunity, low emissions, and low power consumption. The isolated channels feature logic input and output buffers, which are isolated by a silicon dioxide (SiO₂) insulation barrier. In case of input power or signal loss, devices without the suffix F default to a high output, while those with the suffix F default to a low output. When used in conjunction with an isolated power supply, this device helps prevent noise currents in the data bus or other circuits from entering the local ground, which could otherwise interfere with or damage sensitive circuits. Thanks to the innovative die design and routing techniques, the electromagnetic compatibility of the ISO7710-Q1 device is significantly enhanced, mitigating system-level ESD, EFT, and surge issues and meeting radiated standards. The ISO7710-Q1 device is available in 16-pin SOIC wide-body (DW) and 8-pin SOIC narrow-body (D) packages.
Merkmale
- Qualified for automotive applications
- AEC-Q100 qualified with the following results: Device Temperature Grade 1: –40°C to +125°C ambient operating temperature range; Device HBM ESD Classification Level 3A; Device CDM ESD Classification Level C6
- Signal data rate: up to 100Mbps
- Wide supply voltage range: 2.25V to 5.5V
- 2.25V to 5.5V level translation
- Default output high and low options
- Low power consumption, typical current of 1.7mA at 1Mbps
- Low propagation delay: 11ns typical (powered by 5V supply)
- High CMTI: ±100kV/μs (typical)
- Excellent EMC: system-level ESD, EFT, and surge immunity; low emissions
- Isolation barrier lifetime: >40 years
- Wide-body SOIC (DW-16) and narrow-body SOIC (D-8) package options
- Safety and regulatory approvals: VDE enhanced isolation per DIN V VDEV 0884-10 (VDE V 0884-10):2006-12; UL 1577 component recognition program; CSA Component Acceptance Notice 5A, IEC 60950-1 and IEC 60601-1 end equipment standards; CQC certification per GB4943.1-2011; TUV certification per EN 60950-1 and EN 61010-1; VDE, UL, CSA, and TUV certifications completed for DW-16 package; all other certifications planned
Anwendungen
- Hybrid Electric Vehicles
- Motor Control
- Power Supply
- Photovoltaic Inverter
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.5418 | $ 2.54 |
| 10+ | $ 2.1321 | $ 21.32 |
| 30+ | $ 1.8748 | $ 56.24 |
| 100+ | $ 1.6126 | $ 161.26 |
| 500+ | $ 1.4946 | $ 747.30 |
| 1,000+ | $ 1.4422 | $ 1442.20 |
Standardgehäuse2500/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Isolators/Digital Isolators | |
| Hersteller | TI | |
| Verp. | SOIC-8 | |
| Features | Fail-safe output | |
| CMTI(kV/us) | 100kV/us | |
| Propagation Delay(tpd) | 11ns | |
| Number of Channels | 1 | |
| Number of Forward Channels | 1 | |
| Voltage - Supply | 2.25V~5.5V;2.25V~5.5V | |
| Number of Reverse Channels | 0 | |
| Operating Temperature | -40℃~+125℃ | |
| Isolation Voltage(Vrms) | 3000 | |
| Data Rate(Max) | 100Mbps | |
| Default Output | Low Level |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Isolators/Digital Isolators | |
| Hersteller | TI | |
| Verp. | SOIC-8 | |
| Features | Fail-safe output | |
| CMTI(kV/us) | 100kV/us | |
| Propagation Delay(tpd) | 11ns | |
| Number of Channels | 1 |
| Typ | Beschreibung | |
|---|---|---|
| Number of Forward Channels | 1 | |
| Voltage - Supply | 2.25V~5.5V;2.25V~5.5V | |
| Number of Reverse Channels | 0 | |
| Operating Temperature | -40℃~+125℃ | |
| Isolation Voltage(Vrms) | 3000 | |
| Data Rate(Max) | 100Mbps | |
| Default Output | Low Level |
Beschreibung
The ISO7710-Q1 device is a high-performance single-channel digital isolator that provides isolation ratings of 5000 VRMS (DW package) and 3000 VRMS (D package) in accordance with UL 1577. This device is also certified by VDE, TUV, CSA, and CQC. While isolating complementary metal-oxide-semiconductor (CMOS) or low-voltage complementary metal-oxide-semiconductor (LVCMOS) digital I/Os, the ISO7710-Q1 device offers high electromagnetic immunity, low emissions, and low power consumption. The isolated channels feature logic input and output buffers, which are isolated by a silicon dioxide (SiO₂) insulation barrier. In case of input power or signal loss, devices without the suffix F default to a high output, while those with the suffix F default to a low output. When used in conjunction with an isolated power supply, this device helps prevent noise currents in the data bus or other circuits from entering the local ground, which could otherwise interfere with or damage sensitive circuits. Thanks to the innovative die design and routing techniques, the electromagnetic compatibility of the ISO7710-Q1 device is significantly enhanced, mitigating system-level ESD, EFT, and surge issues and meeting radiated standards. The ISO7710-Q1 device is available in 16-pin SOIC wide-body (DW) and 8-pin SOIC narrow-body (D) packages.
Merkmale
- Qualified for automotive applications
- AEC-Q100 qualified with the following results: Device Temperature Grade 1: –40°C to +125°C ambient operating temperature range; Device HBM ESD Classification Level 3A; Device CDM ESD Classification Level C6
- Signal data rate: up to 100Mbps
- Wide supply voltage range: 2.25V to 5.5V
- 2.25V to 5.5V level translation
- Default output high and low options
- Low power consumption, typical current of 1.7mA at 1Mbps
- Low propagation delay: 11ns typical (powered by 5V supply)
- High CMTI: ±100kV/μs (typical)
- Excellent EMC: system-level ESD, EFT, and surge immunity; low emissions
- Isolation barrier lifetime: >40 years
- Wide-body SOIC (DW-16) and narrow-body SOIC (D-8) package options
- Safety and regulatory approvals: VDE enhanced isolation per DIN V VDEV 0884-10 (VDE V 0884-10):2006-12; UL 1577 component recognition program; CSA Component Acceptance Notice 5A, IEC 60950-1 and IEC 60601-1 end equipment standards; CQC certification per GB4943.1-2011; TUV certification per EN 60950-1 and EN 61010-1; VDE, UL, CSA, and TUV certifications completed for DW-16 package; all other certifications planned
Anwendungen
- Hybrid Electric Vehicles
- Motor Control
- Power Supply
- Photovoltaic Inverter
C544533 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Typ | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| ISO7710FD | TI | SOIC-8 | 22 | $ 1.7117 | ||
| ISO7710DR | TI | SOIC-8 | 1,672 | $ 1.1378 | ||
| ISO7710FDR | TI | SOIC-8 | 434 | $ 1.6834 | ||
| ADUM110N0BRZ-RL7 | ADI | SOIC-8 | 36 | $3.0408 $3.2008 | ||
| ISO7710QDRQ1 | TI | SOIC-8 | 0 | $ 2.0995 | ||
| CA-IS3710LS-Q1 | Chipanalog | SOIC-8 | 0 | $ 0.5018 | ||
| ADUM110N0BRZ | ADI | SOIC-8 | 0 | $ 2.6852 | ||
| ISO722QDRQ1 | TI | SOIC-8 | 0 | $ 5.2321 | ||
| ISO721QDRQ1 | TI | SOIC-8 | 0 | $ 9.535 | ||
| ADUM110N1BRZ | ADI | SOIC-8 | 0 | $ 2.5754 |



