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EDA-ModelleEasyEDA
Infineon IRLL024ZTRPBF
| Hersteller | |
| Herst.-Teilenr. | IRLL024ZTRPBF |
| LCSC-Nr. | C538157 |
| Verp. | SOT-223 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 55V 5A SOT-223 |
| Datenblatt | Infineon IRLL024ZTRPBF |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 380pF | |
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 380pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
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Beschreibung
KI-Übersetzung
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Merkmale
KI-Übersetzung
- Advanced Process Technology
- Ultra Low On-Resistance
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.4984 | $ 0.50 |
| 10+ | $ 0.4688 | $ 4.69 |
| 30+ | $ 0.449 | $ 13.47 |
| 100+ | $ 0.4277 | $ 42.77 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 380pF | |
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 380pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Merkmale
KI-Übersetzung
- Advanced Process Technology
- Ultra Low On-Resistance
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
C538157 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| IRLL024NTRPBF-TP | TECH PUBLIC | Ähnliche | SOT-223 | 505 | $ 0.3693 | ||
| TPM604NY3 | TECH PUBLIC | Ähnliche | SOT-223 | 4,990 | $ 0.2785 | ||
| IRFL024ZTRPBF | Infineon | Ähnliche | SOT-223 | 6,607 | $ 0.6228 | ||
| SL10N10A | Slkor | Ähnliche | SOT-223 | 4,005 | $0.2002 $0.2107 | ||
| DOT6N10 | DOINGTER | Ähnliche | SOT-223 | 3,970 | $ 0.0838 |