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DIODES DMT3020LDT-7
| Hersteller | |
| Herst.-Teilenr. | DMT3020LDT-7 |
| LCSC-Nr. | C5378678 |
| Verp. | VDFN3030-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH ARR 30V 8.5A VDFN3030-8 |
| Datenblatt | DIODES DMT3020LDT-7 |
| RoHS-Konformität | 5 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | DIODES | |
| Verp. | VDFN3030-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 173pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8.5A | |
| RDS(on) | 32mΩ@4.5V | |
| Pd - Power Dissipation | 1.95W | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 393pF | |
| Gate Charge(Qg) | 3.6nC | |
| Vgs | ±20V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | DIODES | |
| Verp. | VDFN3030-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 173pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8.5A | |
| RDS(on) | 32mΩ@4.5V | |
| Pd - Power Dissipation | 1.95W |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 393pF | |
| Gate Charge(Qg) | 3.6nC | |
| Vgs | ±20V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Merkmale
KI-Übersetzung
- Low Gate Threshold Voltage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Anwendungen
KI-Übersetzung
- General Purpose Interfacing
- Switch Power Management Functions
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 891
891 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.364$ 0.0947 | $ 0.09 |
| 10+ | $ 0.3213$ 0.0836 | $ 0.84 |
| 30+ | $ 0.3023$ 0.0786 | $ 2.36 |
| 100+ | $ 0.2786$ 0.0725 | $ 7.25 |
| 500+ | $ 0.2691$ 0.0700 | $ 35.00 |
| 1,500+ | $ 0.2627$ 0.0683 | $ 102.45 |
Standardgehäuse1500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | DIODES | |
| Verp. | VDFN3030-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 173pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8.5A | |
| RDS(on) | 32mΩ@4.5V | |
| Pd - Power Dissipation | 1.95W | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 393pF | |
| Gate Charge(Qg) | 3.6nC | |
| Vgs | ±20V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | DIODES | |
| Verp. | VDFN3030-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 173pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8.5A | |
| RDS(on) | 32mΩ@4.5V | |
| Pd - Power Dissipation | 1.95W |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 393pF | |
| Gate Charge(Qg) | 3.6nC | |
| Vgs | ±20V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Merkmale
KI-Übersetzung
- Low Gate Threshold Voltage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Anwendungen
KI-Übersetzung
- General Purpose Interfacing
- Switch Power Management Functions
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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